“…Figure 1 showed that an increasing amount of phosphorus ions can be implanted into the silica glass as the dose of the incident ion increases at least up to 1 × 10 18 cm −2 under an energy of 200 keV; at 20 keV, saturation occurred at 5 × 10 16 cm −2 , and, for 50 and 100 keV, saturation occurred at 5 × 10 17 cm −2 , as shown in the previous work. [14][15][16][17][18] These results indicate that the maximum amount of phosphorus ions that can be implanted into the glass increases as the implantation energy increases. This observation is explained by assuming that the maximum phosphorus concentration exists at a larger depth from the surface of the silica glass at 200 keV than at 20, 50, and 100 keV; i.e., the maximum concentrations of the phosphorus that has been implanted at 20, 50, 100, and 200 keV are theoretically estimated to be located at depths of 19.9, 48.6, 100.2, and 207.3 nm, respectively.…”