Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure

Abstract

In this paper we report results on synthesis of thin films of silicon dioxide (SiO 2 ) using conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with silane (SiH 4 ) and nitrous oxide (N 2 O) as precursor gases. The ellipsometer and stress measurement system were used to test the thickness and refractive index uniformity of the SiO 2 film fabricated. The effects of radio frequency (RF) power chamber pressure and N 2 O/SiH 4 flow ratio on the properties of SiO 2 film were studied. The results show that the refractive index of SiO 2 film is mainly determined by N 2 O/SiH 4 flow ratio .Moreover, the formation of SiO 2 thin films is confirmed by Fourier transform infrared (FTIR) spectroscopy. The thickness and refractive indices of the films measured by ellipsometry C-V measurement show that the electrical properties are directly related to process parameters and Si/SiO 2 interface. The MIS structures were also fabricated from optimized SiO 2 layer to study C-V measurement and to estimate interface, oxide and effective border traps density. The deposited SiO 2 films have good uniformity, compact structure, high deposition rate, low deposition temperature and controllable stress, which can be widely, used in semiconductor devices.

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“…For the deposition of SiO 2 at 200 °C by PECVD, a Plasma-lab80Plus (Oxford Instruments) machine was utilized using silane (SiH 4 in Ar) and nitrous oxide (N 2 O) as precursors. 32,39 The working pressure during the deposition was 133 Pa and the chamber was purged with N 2 for 2 min before the deposition. The growth rate of the deposited lm was approximately 50 nm min −1 .…”