Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Yang, Terry Chien‐Jen; Nomoto, Keita; Puthen-Veettil, Binesh; Lin, Ziyun; Wu, Lingfeng; Zhang, Tian; Jia, Xuguang; Conibeer, Gavin; Perez-Würfl, Ivan

doi:10.1088/2053-1591/aa7328

Cited by 15 publications

(8 citation statements)

References 66 publications

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“…It was revealed that doping of Si nanocrystals with P or Li is (under certain conditions) capable of improving their emittance. 32,33,35,62 In particular, the performed calculations 33,45,52,53 show that doping with P or Li can essentially increase the radiative rates.…”

Section: B Silicon Nanocrystalsmentioning

confidence: 96%

Excitonic relaxation and transfer in semiconductor nanocrystals

Burdov

2020

Preprint

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Some basic radiative and non-radiative processes taking place in semiconductor nanocrystals are discussed, and rates of these processes are calculated. In particular, in the present review we explore both intra-crystallite processes, such as the photon emission, Auger recombination, phononassisted exciton relaxation, capture on surface defects, multi-exciton generation, and inter-crystallite processes realized through the exciton migration in ensembles of nanocrystals. Exciton transitions, creation, and annihilation accompanied by the photon and (or) phonon emission or absorption are considered from the point of view of their influence on the optical properties of nanocrystals.

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Section: B Silicon Nanocrystalsmentioning

confidence: 96%

Excitonic relaxation and transfer in semiconductor nanocrystals

Burdov

2020

Preprint

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“…Similarly, doping with shallow impurities influences the electronic structure of silicon NCs [109][110][111][112][113][114][115][116][117], which, in turn, affects the electron-hole radiative recombination. It was revealed that doping of Si nanocrystals with P or Li is (under certain conditions) capable of improving their emittance [84,87,89,118]. In particular, the performed calculations [87,99,106,107] show that doping with P or Li can essentially increase the radiative transition rates.…”

Section: Silicon Nanocrystalsmentioning

confidence: 98%

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

Бурдов

Vasilevskiy

2021

Applied Sciences

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In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

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“…This enhanced NC growth with P concentration has previously been observed in the literature for SiNCs in a silica matrix prepared using various techniques. [14][15][16] The hypothesis of P doping softening silica matrices has been proposed, resulting in longer diffusion length of Si atoms during annealing, and larger particles. 16 Enhanced diffusion by implanted P atoms has also been proposed as a possible explanation for the favored SiNCs phase separation in the presence of P. 14 A careful examination of atomically resolved 3D images obtained by laser-assisted Atom Probe Tomogrphy (ATP), shown in Figure 1(d) reveals the precise location of the dopant.…”

Section: Sincs Fabrication and Dopingmentioning

confidence: 99%