Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Pham, Thuy T.; Lee, J.H.; Kim, Y.S.; Yeom, Geun Young

doi:10.1016/j.surfcoat.2008.06.034

Cited by 13 publications

(1 citation statement)

References 13 publications

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“…The O/Si ratio was further decreased to 1.93 as the film was deposited using the TMS-O 2 -NH 3 gas mixture at a flow ratio of 0.75. In agreement with the previous reports, the decrease in the O/Si ratio also led to the shift in the stretching mode of the Si-O bond from 1066 to 1051 cm −1 , as shown in Figure 3b [19,21,38]. A sharp reduction in the O/Si ratio (~1.38) and a high N/Si ratio of about 0.16 with a large amount of carbon atoms (~11.2%) were measured from the film using the TMS-NH 3 gas mixture.…”

Section: Resultssupporting

confidence: 92%

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Liu

Chen

et al. 2017

Applied Sciences

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Abstract:The gas barrier property of a silicon oxide (SiO x ) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the glow discharge with the ammonia gas incorporation was monitored by an optical emission spectrometer (OES). Structures, chemical bond configurations, and material properties of the resulting films were investigated. The introduced ammonia gas in the TMS-oxygen plasma resulted in emission lines dominated by the N 2 and CN species with the suppression of the OH and oxygen-related radicals, thereby introducing nitrogen and carbon atoms in the deposited film. A silicon oxynitride (SiO x N y ) film had the best surface morphology and the lowest residual internal stress was achievable by controlling the reactant gas flow ratio of the ammonia and oxygen. The barrier property to the water vapor permeation of the silicon oxide film (~1.65 g/m 2 /day) deposited onto the polyethylene terephthalate (PET) substrate was thus greatly improved to 0.06 g/m 2 /day for the film synthesized from an adequate TMS-oxygen-ammonia gas mixture.

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Section: Resultssupporting

confidence: 92%

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Liu

Chen

et al. 2017

Applied Sciences

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Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

Kim

2009

Met. Mater. Int.

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Silicon nitride films were deposited at room temperature in a plasma-enhanced chemical vapor deposition system. Ion energy and ion energy flux were measured with an ion energy analysis system. The effects of the radio frequency bias power on the ion energy distribution, deposition rate, refractive index, and surface roughness were examined along with the correlations between the ion energy diagnostics and film properties. The bias power varied from 30 W to 90 W. The surface roughness measured by atomic force microscopy was detailed in terms of the mean surface roughness and major pixel density. The deposition rate increased from 271 Å/min to 308 Å/min, increasing the bias power and correlation with the ion energy. Particularly, the refractive index increased with a decrease in the bias power. This is a unique feature resulting from the room-temperature deposition of silicon nitride film controlled in terms of the bias power. Moreover, the large variation from 1.94 to 2.49 facilitates the control of the refractive index as a function of the bias power. Strong dependency of the refractive index on the ion energy flux was also identified.

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Composite layer formation on plastic substrates for flexible display by using functionalized nanoclay

Kim

2012

Macromol. Res.

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Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Cited by 13 publications

References 13 publications

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

Composite layer formation on plastic substrates for flexible display by using functionalized nanoclay

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