Properties of solid state devices with mobile ionic defects. Part I: The effects of motion, space charge and contact potential in metal|semiconductor|metal devices

Gil, Y.; Umurhan, O. M.; Riess, I.

doi:10.1016/j.ssi.2006.10.024

Cited by 46 publications

(47 citation statements)

References 11 publications

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“…As mobilities and disorder constants are taken from the literature, the only manipulations are; i) we introduced a fitted factor of 3 for u BaF 2 V F and u CaF 2 F 0 i [as given in Eq. (8) and (11)] which is well below literature scattering. [19] ii) We assume a slight inhomogeneity of the impurity profile at the interfaces (see elsewhere [19] ).…”

Section: Comprehensive Modeling Of Ion Conductionmentioning

confidence: 74%

“…[1][2][3][4][5][6][7][8][9] They correspond to carrier redistributions at space charge regions near a two-phase contact, and are capable of varying not only the magnitude but also the type of conductivity. [10,11] Such hetero-contacts can be verified in composites or epitaxial heterostructures (a similar role is played by grain boundaries in polycrystalline materials).…”

Section: Introductionmentioning

confidence: 99%

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Comprehensive Modeling of Ion Conduction of Nanosized CaF₂/BaF₂ Multilayer Heterostructures

Guo

Maier

2008

Adv Funct Materials

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Molecular beam epitaxy‐grown CaF2/BaF2 heterolayers are a demonstration of the potential of nanoionics. It has been shown that ion conductivities both parallel and perpendicular to the interfaces increase with decrease in interfacial spacing. This size effect was attributed to the thermodynamically necessary redistribution of the mobile fluoride ions (N. Sata, K. Eberl, K. Eberman, J. Maier, Nature 2000, 408, 946; X. X. Guo, I. Matei, J.‐S. Lee, J. Maier, Appl. Phys. Lett. 2007, 91, 103102). On this basis, the striking phenomenon of an upward bending in the effective parallel conductivity as a function of inverse interfacial spacing ${\sigma}_{m}^{||} ({{\rm 1}/ \ell})$ for low temperatures (T ≤ 593 K) has been satisfactorily explained by application of a modified Mott–Schottky model for BaF2 (X.X. Guo, I. Matei, J. Jamnik, J.‐S. Lee, J. Maier, Phys. Rev. B 2007, 76, 125429). This model was further confirmed by measurements perpendicular to the interfaces that offer complementary information on the more resistive parts. Here a successful comprehensive modeling of parallel and perpendicular conductivities for the whole parameter range, namely for interfacial spacings ranging from 6 to 200 nm and investigated temperatures ranging from 455 to 833 K, is presented. The model is based on literature data for carrier mobilities and Frenkel reaction constants and the assumption of a pronounced F− redistribution. Given the fact that an impurity content that was experimentally supported is taken into account and apart from minor assumptions concerning profile homogeneity, the only fit parameter is the space charge potential. In particular, it is worth mentioning that in BaF2 the low temperature Mott–Schottky space charge zone which is determined by impurities changes over, at high temperatures, into a Gouy–Chapman situation owing to increased thermal disorder. (The situation in CaF2 is of Gouy–Chapman type at all temperatures.)

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Section: Comprehensive Modeling Of Ion Conductionmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Comprehensive Modeling of Ion Conduction of Nanosized CaF₂/BaF₂ Multilayer Heterostructures

Guo

Maier

2008

Adv Funct Materials

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“…If the rate constants are infinitely high, then the equilibrium electron concentrations at the contacts are pinned by the electrodes and independent of the applied voltage. 55 Thus the condition (4c) contains the continuous transition from the "open" ohmic contact ( ⇒ ) to the interface limited kinetics ( ) and "completely blocking" contact (…”

Section: Iii1 Problem Statementmentioning

confidence: 99%

Electrochemical strain microscopy with blocking electrodes: The role of electromigration and diffusion

Morozovska

Eliseev

Kalinin

2012

Journal of Applied Physics

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Electrochemical strains are a ubiquitous feature of solid state ionic devices ranging from ion batteries and fuel cells to electroresistive and memristive memories. Recently, we proposed a scanning probe microscopy (SPM) based approach, referred as electrochemical strain microscopy (ESM), for probing local ionic flows and electrochemical reactions in solids based on bias-strain coupling. In ESM, the sharp SPM tip concentrates the electric field in a small (10-50 nm) region of material, inducing interfacial electrochemical processes and ionic flows. The resultant electrochemical strains are determined from dynamic surface displacement and provide information on local electrochemical functionality. Here, we analyze image formation mechanism in ESM for a special case of mixed electronic-ionic conductor with blocking tip electrode, and determine frequency dependence of response, role of diffusion and electromigration effects, and resolution and detection limits. * Sergei2@ornl.gov 1

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“…Variation of not only the magnitude but also the type of conductivity were verified in composites, grain boundaries in polycrystalline materials and epitaxial heterostructures. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] Conductivities of various functional materials might be manipulated for fundamental research as well as application. Introduction of interfaces not only led to strong variations in conductivity, but also induced qualitatively change of the type of conductivity.…”

Section: Introductionmentioning

confidence: 99%

Space Charge Layer Effect in Solid State Ion Conductors and Lithium Batteries: Principle and Perspective

Chen

Guo

2016

ACSi

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This paper is dedicated to Prof. Dr. Janko Jamnik, who was my enthusiastic and helpful MPI colleague as well as with high academic level and reputation in science community. AbstractThe space charge layer (SCL) effects were initially developed to explain the anomalous conductivity enhancement in composite ionic conductors. They were further extended to qualitatively as well as quantitatively understand the interfacial phenomena in many other ionic-conducting systems. Especially in nanometre-scale systems, the SCL effects could be used to manipulate the conductivity and construct artificial conductors. Recently, existence of such effects either at the electrolyte/cathode interface or at the interfaces inside the composite electrode in all solid state lithium batteries (ASSLB) has attracted attention. Therefore, in this article, the principle of SCL on basis of defect chemistry is first presented. The SCL effects on the carrier transport and storage in typical conducting systems are reviewed. For ASSLB, the relevant effects reported so far are also reviewed. Finally, the perspective of interface engineer related to SCL in ASSLB is addressed.

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Properties of solid state devices with mobile ionic defects. Part I: The effects of motion, space charge and contact potential in metal|semiconductor|metal devices

Cited by 46 publications

References 11 publications

Comprehensive Modeling of Ion Conduction of Nanosized CaF₂/BaF₂ Multilayer Heterostructures

Comprehensive Modeling of Ion Conduction of Nanosized CaF₂/BaF₂ Multilayer Heterostructures

Electrochemical strain microscopy with blocking electrodes: The role of electromigration and diffusion

Space Charge Layer Effect in Solid State Ion Conductors and Lithium Batteries: Principle and Perspective

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Properties of solid state devices with mobile ionic defects. Part I: The effects of motion, space charge and contact potential in metal|semiconductor|metal devices

Cited by 46 publications

References 11 publications

Comprehensive Modeling of Ion Conduction of Nanosized CaF2/BaF2 Multilayer Heterostructures

Comprehensive Modeling of Ion Conduction of Nanosized CaF2/BaF2 Multilayer Heterostructures

Electrochemical strain microscopy with blocking electrodes: The role of electromigration and diffusion

Space Charge Layer Effect in Solid State Ion Conductors and Lithium Batteries: Principle and Perspective

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Comprehensive Modeling of Ion Conduction of Nanosized CaF₂/BaF₂ Multilayer Heterostructures

Comprehensive Modeling of Ion Conduction of Nanosized CaF₂/BaF₂ Multilayer Heterostructures