Resistive transition measurements are reported for MgB 2 strands with SiC dopants. The starting Mg powders were 325 mesh 99.9% pure, and the B powders were amorphous, 99.9% pure, and at a typical size of 1-2 µm. The SiC was added as 10 mol% of SiC to 90 mol% of binary MgB 2 [(MgB2)0.9(SiC)0.1]. Three different SiC powders were used; the average particle sizes were 200 nm, 30 nm, and 15 nm. The strands were heat treated for times ranging from 5 to 30 minutes at temperatures from 675°C to 1000°C. Strands with 200 nm size SiC additions had µ 0 H irr and B c2 which maximized at 25.4 T and 29.7 T after heating at 800°C for 30 minutes. The highest values were seen for a strand with 15 nm SiC heated at 725°C for 30 minutes which had a µ 0 H irr of 29 T and a B c2 higher than 33 T.