Properties of Switching Transient in the Semi-Insulating GaAs Photoconductive Semiconductor Switch With Opposed Contacts

Wei, Jinhong; Li, Song; Wang, Langning; Zeng, Fanzheng; Wang, Junting; Yue, Yunrui; Liu, Zhaohua; Qian, Baoliang

doi:10.1109/tps.2022.3207061

Cited by 11 publications

(3 citation statements)

References 25 publications

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“…When the local electric field in the plasma region exceeds 4 kV/cm, the classical Gunn-like domain instability starts to form the initial domains, then gradually converts the initial domains to the high-field, powerfully avalanche domains (> 250 kV/cm) due to the negative differential mobility (NDM) effect at the ultrahigh field. The formation and evolution of multiple powerfully avalanching domains inside the filamentary channel have been demonstrated to be the physical reason for the nonlinear switching of the avalanche GaAs PCSS [26][27][28]. So, in figure 5(c), a co-existence state of the linear and nonlinear switching can be presented in the switching transient.…”

Section: Equivalent Channels Participating In the Switchingmentioning

confidence: 94%

“…As for the spot length, the extension of this size can be considered mainly along both the active and passive parts, which does not significantly change the cross section of the active part or passive part, but strengthens the formation and evolution of the domains on the active part. Due to the parallel relationship between the active and passive parts, the "winner takes all" principle [28] plays an important role during the switching process. The strengthened switching in one channel will thus inevitably suppress the switching developing in the other channel.…”

Section: Equivalent Channels Participating In the Switchingmentioning

confidence: 99%

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Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

WEI 韦,

LI 李,

CHEN 陈

et al. 2024

Plasma Sci. Technol.

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To guide the illuminating design to improve the on-state performances of gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS), the effect of spot size on the operation mode of GaAs PCSS based on a semi-insulating wafer with a thickness of 1 mm, triggered by a 1064-nm extrinsic laser beam with the rectangular spot, has been investigated experimentally. It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes, and then significantly boosts the PCSS toward different operation modes. On this basis, a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms. Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching, while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching, which have been proved by comparing the domain evolutions under different spot sizes.

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Section: Equivalent Channels Participating In the Switchingmentioning

confidence: 94%

Section: Equivalent Channels Participating In the Switchingmentioning

confidence: 99%

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

WEI 韦,

LI 李,

CHEN 陈

et al. 2024

Plasma Sci. Technol.

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“…In recent years, researchers have conducted many studies on device failure mechanisms [33] and enhanced device lifetimes using techniques, such as plating [34,35] , changing electrode shapes, and modifying triggering methods [36,37] , which offer valuable references for improving device lifetimes. In the future, the power of combining those devices will be a vital pathway for finding practical applications for optical switching devices [38][39][40] .…”

Section: Introductionmentioning

confidence: 99%

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Xun,

Niu,

Wang

et al. 2024

中国光学快报

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Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability. Over the past several years, benefitting from the sustainable innovations in laser technology and the significant progress in materials technology, megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices. Here, we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode, including the mechanism, system architecture, critical technology, and experimental demonstration of the proposed high-power photonic microwave sources. The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

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Switching jitter of avalanche gallium arsenide photoconductive semiconductor switch influenced by multiple avalanche domains

Chen,

Wei,

Sun

et al. 2024

Review of Scientific Instruments

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The stability of synchronous operation is directly related to the time jitter of the gallium arsenide photoconductive semiconductor switch (GaAs PCSS). In this work, a numerical model for the switching jitter of avalanche GaAs PCSS is established, and the impacts of triggering optical energy and bias electric field on the switching jitter are investigated numerically based on an equivalent bulk current channel. The proposed numerical model predicts well the changing characteristics of switching time as well as switching jitter, which has been demonstrated by the experimental results. On this basis, the theory of multiple avalanche domains is introduced to compare the domain evolutions influenced by the bias electric field and triggering optical energy. The results indicate that the reduction of switching jitter is significantly determined by the accelerated formation and evolution of avalanche domains, which provides a good explanation of the jitter mechanism of switching time.

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Properties of Switching Transient in the Semi-Insulating GaAs Photoconductive Semiconductor Switch With Opposed Contacts

Cited by 11 publications

References 25 publications

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Switching jitter of avalanche gallium arsenide photoconductive semiconductor switch influenced by multiple avalanche domains

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