Solid State Communications

2014

DOI: 10.1016/j.ssc.2014.03.021

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Properties of the resonant tunneling diode in external magnetic field with inclusion of the Rashba effect

Nemanja Niketic

¹

,

²

,

Jelena Radovanović

³

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Cited by 3 publications

References 16 publications

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Tunnelprozesse in resonanten Tunneldioden

¹

2021

Grundlagen Der Halbleiterphysik II

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Tunnelprozesse in resonanten Tunneldioden

¹

2021

Grundlagen Der Halbleiterphysik II

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Embedded quantum dots in semiconductor nanostructures

¹

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²

2019

J. Phys.: Conf. Ser.

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In this work, we report the behavior of the tunneling current in a semiconductor nanostructure of (Ga, Al)As/GaAs which takes into account the behavior of the electrons and the Rashba’s spin orbit interaction in the presence of embedded quantum dots of different geometries (lens, pyramid and ring) in voltage function, magnetic field, and the different values of the interaction spin orbit (π/2, π/4 and 3π/4). The results that were obtained show, that the intensity of the current presents appreciable changes when is changed the configuration of the quantum dot as the intensities of external fields and spin polarization as well. All these internal and external effects that are studied in our model, significantly modify the transport of information of the semiconductor nanostructure, our results show that the spin effects and the quantum dot configuration contribute to the quantum memories efficiency and the spin filter devices of actual use on nanoscience and nanotechnology.

Transport spin dependent in nanostructures: Current and geometry effect of quantum dots in presence of spin-orbit interaction

Paredes-Gutierrez

¹

,

Pérez-Merchancano

²

,

³

2017

J. Phys.: Conf. Ser.

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