Properties of the surface generation-recombination noise in 1.94 µm GaSb-based laser diodes

Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

“…At the bias values U > 0.5 V, the level of electrical fluctuation rapidly decreases as now R 2 shunts R 1B ( Figure 9 ). A similar electrical noise dependence on forward current with an evident one strong bump has been also observed in the GaSb-based laser diodes in a subthreshold region [ 17 ]. For GaAsBi group B LDs the leakage channel resistance R 1B is independent of the applied voltage ( Figure 9 ) and the leakage current, corresponding to the ohmic part of the I – U characteristic, is larger up to four orders of magnitude compared to the samples from group A ( Figure 7 ).…”

“…Normalized g-r noise spectra of group A LD at different temperatures are presented in Figure 11. When the temperatures are below 250 K (Figure 11a) the relaxation time τ = 1/(2π f 0 ) is dependent on temperature and is described as: τ=τ0expfalse(Ea/kTfalse) [17], where E a is the activation energy of an observed g-r process. The maximum ( S U / U 2 ) f value appears when the Fermi level coincides with the trap energy level [13,28].…”

“…It is well known, that for the optoelectronic devices, such as light-emitting diodes (LEDs) or LDs, there is a strong relation between the electrical noise and current–voltage characteristics [ 17 , 22 ], e.g., leakage channel existence is usually followed by an increased low-frequency electrical fluctuations’ level [ 23 ].…”

“…In [ 14 , 15 , 16 ] it has been demonstrated that the low-frequency noise spectroscopy is a suitable, very effective and non-destructive characterization method for LDs as the measurements are performed at a near equilibrium state. What is more, the investigation of samples is possible at bias currents far below the threshold current of laser generation [ 16 , 17 ]. Nevertheless, the obtained noise characteristics contain information about physical processes that more or less influence semiconductor laser operation at lasing and overall device reliability.…”

Characterization of a Flexible InGaSb/PI Thin Film Grown by RF Magnetron Sputtering and Aqueous Stability Improvement via Surface Coating

“…Sb‐based compound semiconductors have been widely studied as materials for IR‐region optical devices owing to their comparatively narrow band‐gap energy and for high‐speed electronic devices owing to their high carrier mobility and saturation velocity . Previous studies have considered a thermophotovoltaic (TPV) system as one of the application devices .…”