Properties of thin N-type Yb0.14Co4Sb12 and P-type Ce0.09Fe0.67Co3.33Sb12 skutterudite layers prepared by laser ablation

Abstract

The properties of thin thermoelectric layers (about 60 nm in thickness) prepared by pulsed laser deposition are presented. Hot pressed targets were made from “middle” temperature range thermoelectric bulk materials with the potential high figure of merit ZT. P-type and N-type layers were prepared from Yb0.19Co4Sb12 and Ce0.1Fe0.7Co3.3Sb12 targets, respectively. The thin films were deposited on quartz glass substrates using KrF excimer laser. The individual layers were prepared by applying different laser beam energy densities (2 or 3 J cm−2) at several substrate temperatures (200, 250, or 300 °C). Crystallinity and composition of the layers were examined by x-ray diffraction and wavelength dispersive analysis, respectively. Homogeneity of Yb across a surface of the Yb filled film was explored by secondary ion mass spectrometry. The thermoelectric properties, the Seebeck coefficient, the electrical resistivity, and the power factor, for the best prepared P and N layer are presented in the temperature range from 300 to 500 K.

Thermoelectric Properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2Te Multi-Layered Structures

“…Earlier we published results on thin skutterudite layers prepared by PLD in Ar atmosphere from the Ce 0.1 Fe 0.7 Co 3.3 Sb 12 hot pressed target [15]. The best thermoelectric properties were obtained on the layers prepared at Ts = 250˚C.…”

Thermoelectric properties of DC-sputtered filled skutterudite thin film

“…The temperature of the transition from the amorphous to crystalline state was found to be around 428 K. On the other hand, Caylor et al 23 presented skutterudite (CoSb 3 and IrSb 3 ) thin films of high phase purity and crystallinity. Zeipl et al 24,25 studied thin layers of Yb filled CoSb 3 prepared by pulsed laser deposition (PLD) with the best results obtained on quartz substrate at 470 K. Kumar et al 26 reported In and Yd double filled CoSb 3 thin film using PLD and obtained maximum power factor of 0.68 W/m K 2 at 700 K. However, all the studies reported on thin film skutterudite did not provide the figure of merit at high temperatures which impeded the development for high temperature applications.…”

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

“…Song et al 19 have analyzed the influence of different scattering mechanisms on the significant reduction in thermal conductivity of PLD grown CoSb 3 thin films and superlattices as compared to the bulk. Ziepl et al 27 have reported high electrical resistivity in Yb-doped CoSb 3 films grown by PLD, but no physical explanation was provided. Similarly, lattice dynamics of skutterudites have been studied by ab initio methods, inelastic x-ray scattering, 11 and Raman spectroscopy.…”

“…19,20 It will be of both fundamental and practical significance to examine the thermoelectric properties of thin films of (In, Yb)-doped CoSb 3 on different substrates of practical significance. Moreover, the available reports on the growth, [21][22][23] transport, and structural properties [24][25][26][27] are either limited to CoSb 3 films or on thermoelectric properties of filled CoSb 3 films. 27 For instance, Caylor et al 22 and Colceag et al 28 have studied the influence of growth conditions on the phase purity, crystallinity, and morphology of CoSb 3 thin films grown by pulsed laser deposition (PLD).…”

“…Moreover, the available reports on the growth, [21][22][23] transport, and structural properties [24][25][26][27] are either limited to CoSb 3 films or on thermoelectric properties of filled CoSb 3 films. 27 For instance, Caylor et al 22 and Colceag et al 28 have studied the influence of growth conditions on the phase purity, crystallinity, and morphology of CoSb 3 thin films grown by pulsed laser deposition (PLD). Savchuk et al 24 have studied the carrier transport mechanisms in CoSb 3 thin films grown by dc magnetron sputtering.…”