Properties of Tin Thin Films Deposited by Alcvd as Barrier for Cu Metallization

Satta, Alessandra; Beyer, Gerald; Maex, Karen; Elers, Kai; Haukka, Suvi; Vantomme, André

doi:10.1557/proc-612-d6.5.1

Cited by 20 publications

(25 citation statements)

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“…In recent years, TiN research has focused on its applications in semiconductor device technology, such as Al diffusion barriers, gate electrodes in fieldeffect transistors and advanced metallizations and interconnects in ultra-large scale integrated circuits and solar cells. [1][2][3][4][5][6][7] In particular, recent studies have shown that TiN is an excellent ohmic contact for the widely studied n-type gallium nitride ͑Si-doped ␣-GaN͒ semiconductor technology, [8][9][10][11] due to its low-work function ͑3.74 eV͒, which is close to the electron affinity of GaN ͑4.1 eV͒. 12 As there is a strong miniaturization trend in microelectronics, smaller device sizes and increased densities demand the development of reliable electronic devices at the nanometer scale.…”

Section: Introductionmentioning

confidence: 99%

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Patsalas

Logothetidis

2003

Journal of Applied Physics

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Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions Appl. Phys. Lett. 101, 113111 (2012) Thermally induced interface chemistry in Mo/B4C/Si/B4C multilayered films J. Appl. Phys. 112, 054317 (2012) Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure Spectroscopic ellipsometry ͑SE͒ is employed to study the evolution of microstructure, stoichiometry, and electron-transport properties of titanium nitride ͑TiN͒ heterostructures grown on Si and gallium nitride ͑GaN͒ by reactive magnetron sputtering. In order to achieve subnanometer resolution for the SE analysis, we developed and validated the appropriate methods of interpreting the optical data. Thus, we used ͑a͒ effective medium theories describing the heterostructures in terms of their constituent materials ͑Si, GaN, TiN, over-stoichiometric TiN x , and voids͒, and ͑b͒ a combined Drude-Lorentz model describing the optical response of the conduction and valence electrons of TiN and TiN x . In the case of TiN/Si, the SE results indicate a pure Volmer-Weber type of growth with four distinct growth stages. A TiN x layer is formed before TiN due to the stress variations during growth. On the other hand, TiN/GaN exhibits a quasi two-dimensional growth character. In both cases, the TiN resistivity is very high for films thinner than the critical thickness for homogeneous growth. Thus, for practical applications in electronic devices the thickness of the TiN layer should be at least 4 and 14 nm for TiN/GaN and TiN/Si, respectively.

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Section: Introductionmentioning

confidence: 99%

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Patsalas

Logothetidis

2003

Journal of Applied Physics

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“…In addition, they have attracted special interest for applications in different areas of semiconductor device technology, such as Al diffusion barriers, gate electrodes in field-effect transistors, and advanced metallizations and interconnects in ultralarge scale integrated ͑ULSI͒ circuits. [1][2][3][4][5][6] As the size of the components of ULSI circuits becomes smaller, the study of the electronic properties of the consisting materials should be addressed in the nanometer scale. Of special interest is the study of nanocrystalline TiN x films, which is highly demanding and may differ from previous ones conducted for simple metals such as Ag ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

Patsalas

Logothetidis

2001

Journal of Applied Physics

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Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics J. Appl. Phys. 112, 074114 (2012) Investigation of nonuniformity phenomenon in nanoscale SiO2 and high-k gate dielectrics J. Appl. Phys. 112, 064119 (2012) Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl.Spectroscopic ellipsometry ͑SE͒ was employed to get insights on the optical, electronic, and transport properties of nanocrystalline titanium nitride (TiN x ) films with respect to their microstructure and stoichiometry. The films' properties can be tailored by varying the energy of bombarding ions during sputter deposition and the substrate temperature (T d ). The best metallic behavior of TiN x ͑resistivity 40 ⍀ cm and conduction density 5.5ϫ10 22 electrons/cm 3 ͒ has been observed in films developed with energy above 100 eV and T d у400°C. A redshift of the optical gaps has been observed for overstoichiometric films, suggesting it as a sensitive probe to investigate the TiN x stoichiometry. The energy, strength, and broadening of the interband transitions were studied with respect to the energy of ions and T d and they were explicitly correlated with the TiN x crystal cell size and grain orientation. On the other hand, the study of intraband absorption has provided the conduction electron density with respect to ion energy and T d , which promotes the densification of TiN x films due to different mechanisms. Combined SE and x-ray analysis was used to identify the electron scattering mechanisms, showing that the main electron scattering sites are the grain boundaries and the Ti vacancies for stoichiometric (xϭ1) and overstoichiometric (xϳ1.1) films, respectively.

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“…As we found before [7], in such samples k F ℓ ≃ 1, where k F is the Fermi vector, and ℓ ∼ 0.3 nm is the mean free path. This short mean free path can be related to the enhanced Cl content (up to 3%), characteristic of films grown by the above method [8]. Four-probe resistance measurements were carried out by the standard low frequency (0.4-2 Hz) ac lock-in current source technique with the ac current 0.01-1 nA.…”

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confidence: 99%

Localized Superconductivity in the Quantum-Critical Region of the Disorder-Driven Superconductor-Insulator Transition in TiN Thin Films

et al. 2007

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We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between superconducting and insulating phases, evidencing a direct superconductor-insulator transition without an intermediate metallic phase. At moderate temperatures, in the insulating films we reveal thermally activated conductivity with the magnetic field-dependent activation energy. At very low temperatures, we observe a zero-conductivity state, which is destroyed at some depinning threshold voltage VT . These findings indicate formation of a distinct collective state of the localized Cooper pairs in the critical region at both sides of the transition.An early suggestion that tuning disorder strength can cause a direct superconductor-insulator transition (SIT) in two-dimensional systems [1] triggered explosive activity in experimental studies of superconductor films [2]. Experimentally, the SIT can be induced by decreasing the film thickness [3] and/or, close to the critical thickness, also by the magnetic field [4]. These scenarios are commonly referred to as disorder-driven SIT (D-SIT) and magnetic-field driven SIT. Recent studies on the Binduced insulator revealed several striking features: a magnetic-field-dependent thermally activated behavior of the conductivity [5] and a threshold response to the dc voltage [6], indicating the possible formation of a distinct collective insulating state. Importantly, these findings refer to the films belonging to the superconducting side of the D-SIT. This rises the question of whether the above findings are specific only to the superconducting side of the D-SIT or a characteristic feature of the whole critical region including both the insulating and superconducting sides of the D-SIT.In this Letter we focus on the insulating side of the disorder-driven superconductor-insulator transition in TiN films. The transition itself turns out to be exceptionally sharp. At zero and low magnetic fields we find thermally activated behavior of the conductivity. A positive magnetoresistance and a distinct threshold behavior in the low-temperature I-V characteristics persist on the insulating side of the D-SIT. Our results clearly indicate that, in the vicinity of the D-SIT, the response to applied magnetic and/or electric fields, is the same irrespective of whether the underlying ground state is superconducting or insulating.The 5-nm thick TiN films were grown by atomic layer chemical vapor deposition onto a Si/SiO 2 substrate. The samples for transport measurements were patterned into Hall bridges using conventional UV lithography and subsequent plasma etching. To increase sheet resistances (R ) without introducing structural changes, the films were thinned by an additional soft plasma etching. Electron transmission micrographs and diffraction patterns revealed a polycrystalline structure in both initial and etched films, the interfaces separating densely-p...

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Properties of Tin Thin Films Deposited by Alcvd as Barrier for Cu Metallization

Cited by 20 publications

References 1 publication

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

Localized Superconductivity in the Quantum-Critical Region of the Disorder-Driven Superconductor-Insulator Transition in TiN Thin Films

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