Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems

Hara, Tohru; Yamanoue, Akira; Iio, Hiroki; Inoue, Ken; Washidzu, Gen; Nakamura, Shigeaki

doi:10.1143/jjap.30.1447

Cited by 43 publications

(13 citation statements)

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“…In recent years, TiN research has focused on its applications in semiconductor device technology, such as Al diffusion barriers, gate electrodes in fieldeffect transistors and advanced metallizations and interconnects in ultra-large scale integrated circuits and solar cells. [1][2][3][4][5][6][7] In particular, recent studies have shown that TiN is an excellent ohmic contact for the widely studied n-type gallium nitride ͑Si-doped ␣-GaN͒ semiconductor technology, [8][9][10][11] due to its low-work function ͑3.74 eV͒, which is close to the electron affinity of GaN ͑4.1 eV͒. 12 As there is a strong miniaturization trend in microelectronics, smaller device sizes and increased densities demand the development of reliable electronic devices at the nanometer scale.…”

Section: Introductionmentioning

confidence: 99%

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Patsalas

Logothetidis

2003

Journal of Applied Physics

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Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions Appl. Phys. Lett. 101, 113111 (2012) Thermally induced interface chemistry in Mo/B4C/Si/B4C multilayered films J. Appl. Phys. 112, 054317 (2012) Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure Spectroscopic ellipsometry ͑SE͒ is employed to study the evolution of microstructure, stoichiometry, and electron-transport properties of titanium nitride ͑TiN͒ heterostructures grown on Si and gallium nitride ͑GaN͒ by reactive magnetron sputtering. In order to achieve subnanometer resolution for the SE analysis, we developed and validated the appropriate methods of interpreting the optical data. Thus, we used ͑a͒ effective medium theories describing the heterostructures in terms of their constituent materials ͑Si, GaN, TiN, over-stoichiometric TiN x , and voids͒, and ͑b͒ a combined Drude-Lorentz model describing the optical response of the conduction and valence electrons of TiN and TiN x . In the case of TiN/Si, the SE results indicate a pure Volmer-Weber type of growth with four distinct growth stages. A TiN x layer is formed before TiN due to the stress variations during growth. On the other hand, TiN/GaN exhibits a quasi two-dimensional growth character. In both cases, the TiN resistivity is very high for films thinner than the critical thickness for homogeneous growth. Thus, for practical applications in electronic devices the thickness of the TiN layer should be at least 4 and 14 nm for TiN/GaN and TiN/Si, respectively.

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Section: Introductionmentioning

confidence: 99%

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Patsalas

Logothetidis

2003

Journal of Applied Physics

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“…In addition, they have attracted special interest for applications in different areas of semiconductor device technology, such as Al diffusion barriers, gate electrodes in field-effect transistors, and advanced metallizations and interconnects in ultralarge scale integrated ͑ULSI͒ circuits. [1][2][3][4][5][6] As the size of the components of ULSI circuits becomes smaller, the study of the electronic properties of the consisting materials should be addressed in the nanometer scale. Of special interest is the study of nanocrystalline TiN x films, which is highly demanding and may differ from previous ones conducted for simple metals such as Ag ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

Patsalas

Logothetidis

2001

Journal of Applied Physics

283

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Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics J. Appl. Phys. 112, 074114 (2012) Investigation of nonuniformity phenomenon in nanoscale SiO2 and high-k gate dielectrics J. Appl. Phys. 112, 064119 (2012) Strain dependent stabilization of metallic paramagnetic state in epitaxial NdNiO3 thin films Appl. Phys. Lett. 101, 132101 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl.Spectroscopic ellipsometry ͑SE͒ was employed to get insights on the optical, electronic, and transport properties of nanocrystalline titanium nitride (TiN x ) films with respect to their microstructure and stoichiometry. The films' properties can be tailored by varying the energy of bombarding ions during sputter deposition and the substrate temperature (T d ). The best metallic behavior of TiN x ͑resistivity 40 ⍀ cm and conduction density 5.5ϫ10 22 electrons/cm 3 ͒ has been observed in films developed with energy above 100 eV and T d у400°C. A redshift of the optical gaps has been observed for overstoichiometric films, suggesting it as a sensitive probe to investigate the TiN x stoichiometry. The energy, strength, and broadening of the interband transitions were studied with respect to the energy of ions and T d and they were explicitly correlated with the TiN x crystal cell size and grain orientation. On the other hand, the study of intraband absorption has provided the conduction electron density with respect to ion energy and T d , which promotes the densification of TiN x films due to different mechanisms. Combined SE and x-ray analysis was used to identify the electron scattering mechanisms, showing that the main electron scattering sites are the grain boundaries and the Ti vacancies for stoichiometric (xϭ1) and overstoichiometric (xϳ1.1) films, respectively.

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“…The other relevant HTC product requirement is the use of an RTP TiN barrier metal process, (Ref. [3][4][5][6][7][8][9][10], that provides a low contact resistance titanium nitride/silicide film. The TiN barrier metal is also used in many IC fabrication processes to prevent aluminum spiking and silicon nodule growth in contact regions.…”

Section: • Backgroundmentioning

confidence: 99%

“…[3][4][5][6][7][8][9][10]. A Varian 3180 deposited the initial titanium thickness of 450A with no heat added to the process.…”

Section: Standard Film Processesmentioning

confidence: 99%

<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

O'Meara¹

1994

SPIE Proceedings

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Ultrasonic wirebond pull test failures were identified on 7 of 30 development lots receiving a rapid thermal processed (RTP) titanium nitride (TiN) barrier metal (as part of the metal film stack) over a 16 month period. In some cases, the pull test failures occurred at forces less than the minimum requirement of 2.5 grams. The failures were intermittent in wafer location and resulted in exposed borophosphosilicate glass (BPSG) under the metal pads . No trends were found with product type , proces s dates or sequence, or processing equipment, (BPSG, metal deposition or RTP ) . The faulty films did not fail tape peel adhesion tests , and thus could not be identified by that technique.The problem was found to be related to an interaction between the titanium and BPSG during the RTP nitridation process. Our experiments, analytical studies and literary surveys suggest that a dopant in BPSG either embrittles the TiN (or interfacial glass) through consumptive segregation or enhances the BPSG flow properties during RTP, creating a weakly adhering interfacial region after the ultrasonic action of the wirebond process. Further experiments refute the reflowing BPSG theory and somewhat substantiate the dopant segregation/embrittling phase theory. • BACKGROUNDThe multimetal level, radiation hardened processes used at the Hughes Technology Center (HTC) require the low thermal budget and good planarization properties of a specific TMCTS BPSG process flowed at 8 50C, (Ref. 1,2). BPSG is commonly used in integrated circuit (IC) fabrication at dopant concentrations around 4% boron and 4% phosphorus because of the good, relatively low temperature glass flow characteristics and stability from precipitate formations found in higher dopant concentrations. The other relevant HTC product requirement is the use of an RTP TiN barrier metal process, , that provides a low contact resistance titanium nitride/silicide film. The TiN barrier metal is also used in many IC fabrication processes to prevent aluminum spiking and silicon nodule growth in contact regions.After the success of several experimental lots using BPSG and O-8194-1668-1/94/$6.OO SPIE Vol. 2335 / 115 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/16/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems

Cited by 43 publications

References 9 publications

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Interface properties and structural evolution of TiN/Si and TiN/GaN heterostructures

Optical, electronic, and transport properties of nanocrystalline titanium nitride thin films

<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

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