Properties of ZnO:Ga Transparent Conducting Film Fabricated on O2 Plasma-Treated Polyethylene Naphthalate Substrate

Kim, Byeong-Guk; Kim, Jeong-Yeon; Oh, Byoung-Jin; Lim, Dong-Gun; Park, Jae-Hwan; Woo, Duck-Hyun; Kweon, Soon-Yong

doi:10.3740/mrsk.2010.20.4.175

Korean. J. Mater. Res.

2010

DOI: 10.3740/mrsk.2010.20.4.175

|View full text |Cite

Properties of ZnO:Ga Transparent Conducting Film Fabricated on O2 Plasma-Treated Polyethylene Naphthalate Substrate

Byeong-Guk Kim¹,

Jeong-Yeon Kim²,

Byoung-Jin Oh³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Effect of Deposition Temperature on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells

Son¹

2011

Korean. J. Mater. Res.

View full text Add to dashboard Cite

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to 500 o C. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to 400 Key words Ga, ZnO, grain, resistivity, sputtering. 서 론최근

show abstract

Effect of Deposition Temperature on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells

Son¹

2011

Korean. J. Mater. Res.

View full text Add to dashboard Cite

show abstract

Effect of RF Power on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells

Son¹

2011

Korean. J. Mater. Res.

View full text Add to dashboard Cite

We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90 W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90 W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90 W. GZO thin film shows the lowest resistivity of 2.2 × 10 −4 Ωcm and the highest electron concentration of 1.7 × 10 21 cm −3 at 90 W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.Key words Ga, ZnO, RF power, resistivity, sputtering. 서 론투명

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Properties of ZnO:Ga Transparent Conducting Film Fabricated on O2 Plasma-Treated Polyethylene Naphthalate Substrate

Cited by 2 publications

References 5 publications

Effect of Deposition Temperature on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells

Effect of Deposition Temperature on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells

Effect of RF Power on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells

Contact Info

Product

Resources

About