Properties of ZnO thin films prepared by reactive evaporation

Gordillo, G.; Calderón, C.

doi:10.1016/s0927-0248(00)00394-9

Cited by 62 publications

(23 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Finalmente como contacto eléctrico superior se utilizó una película de ZnO con 1 µm de espesor; esta capa fue sintetizada por medio de evaporación reactiva [11].…”

Section: Methodsunclassified

Caracterización fisicoquímica del sistema Mo/CuInS2/Zn(O,OH)S/ZnO por medio de espectroscopía fotoelectrónica XPS y AES

Vallejo

Díaz‐Uribe

Hurtado

2014

View full text Add to dashboard Cite

Resumen Las técnicas de espectroscopía en volumen y superficie son métodos analíticos muy confiables para realizar la caracterización de películas delgadas de diferentes materiales; en este trabajo se presentan resultados relacionados con la composición de la capa absorbente (CuInS 2 ) y la capa buffer Zn(O,OH)S en el sistema Mo/CuInS 2 /Zn(O,OH)S/ZnO. Las capas de CuInS 2 y ZnS fueron sintetizadas por co-evaporación y deposición de baño químico (CBD) respectivamente, el sistema fue caracterizado por medio de espectroscopia fotoelectrónica de rayos X (XPS) y todo el sistema fue estudiado por medio de espectroscopia electrónica Auger (AES). Los resultados de XPS indicaron que la capa buffer cubrió uniformemente la superficie de CuInS 2 , además se verificó que la capa buffer esta compuesta por una mezcla de diferentes compuestos. Finalmente la caracterización por AES en profundidad permitió determinar la composición de cada una de las películas del sistema fotovoltáico.Abstract Volume and surface spectroscopy techniques are reliable analytical methods to characterize thin films of different materials. This paper presents results related to the composition of the absorbing film (CuInS 2 ) and the Zn(O,OH)S buffer film within the Mo/CuInS 2 /Zn(O,OH)S/ZnO system. CuInS 2 and ZnS films were synthesized per co-evaporation and chemical bath deposition (CBD) respectively. The system was characterized through an X-ray photoelectron spectroscopy (XPS) and studied through the Auger electron spectroscopy (AES). The results of the XPS indicated that the buffer film covered uniformly the CuInS 2 surface, and we were able to verify that this film is created by a mixture of different compounds. Finally, the AES characterization allowed us to determine the composition of each one of the films of the photovoltaic system. Palabras Clave: espectroscopía, CuInS 2 , voltaje, películas delgadas, celdas solares.

show abstract

“…Finalmente como contacto eléctrico superior se utilizó una película de ZnO con 1 µm de espesor; esta capa fue sintetizada por medio de evaporación reactiva [11].…”

Section: Methodsunclassified

Caracterización fisicoquímica del sistema Mo/CuInS2/Zn(O,OH)S/ZnO por medio de espectroscopía fotoelectrónica XPS y AES

Vallejo

Díaz‐Uribe

Hurtado

2014

View full text Add to dashboard Cite

show abstract

“…1,2 The size controllability and the crystallinity are the key factors for the applications. Various methods 3 -7 have been employed to achieve ZnO nanomaterials of the desired size, morphology and applications, where zinc acetate dihydrate (Zn CH 3 COO 2 Ð2H 2 O) has been the preferred choice as precursor owing to its low decomposition temperature, high solubility and minimal contamination.…”

Section: Introductionmentioning

confidence: 99%

“…The spectrum in the positive ion mode (25°C) showed various hydrocarbons and oxygenated hydrocarbon peaks. The 2 , suggesting decomposition of the species. The spectrum at 150°C did not show notable decreases in hydrocarbon and oxygenated hydrocarbon peak intensities, but significant changes were observed in 64 ZnO and its isotope ion abundances.…”

mentioning

confidence: 99%

In situ thermo‐TOF‐SIMS study of thermal decomposition of zinc acetate dihydrate

Ghule

Chen

et al. 2004

J. Mass Spectrom.

View full text Add to dashboard Cite

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was used for an in situ thermal decomposition study of Zn(CH 3 COO) 2 ·2H 2 O forming ZnO nanoparticles. TOF-SIMS spectra were recorded at regular temperature intervals of 25• C in positive and negative detection modes in a dynamic thermal process.Controlled heating (5 • C min −1 ) of Zn(CH 3 COO) 2 ·2H 2 O was also carried out using thermogravimetric analysis (TGA) in an oxygen atmosphere (20 ml min −1 ). Nearly spherical ZnO nanoparticles with no agglomeration and a narrow size distribution (diameter ∼50 nm) were observed, which were characterized using scanning electron microscopy, transmission electron microscopy and x-ray diffraction. In situ thermo-TOF-SIMS was used to monitor the 64 Zn + and 66 Zn + ion abundances as a function of temperature, which showed a similar profile to that observed for weight loss in TGA during decomposition. Based on the experimental results, a possible decomposition mechanism for the formation of ZnO is proposed.

show abstract

“…5,7 Many techniques have been employed to prepare Al-ZnO thin films, such as magnetron sputtering, 8 pulsed laser deposition, 9 and chemical deposition. 10 It was found that the properties of Al-ZnO films are strongly dependent upon the preparation conditions such as the deposition methods, chamber pressure, and substrate temperature. [8][9][10] Furthermore, it was suggested by Cong et al 11 recently that the Al doping can induce an enhancement of p -d coupling in ZnO.…”

mentioning

confidence: 99%

“…10 It was found that the properties of Al-ZnO films are strongly dependent upon the preparation conditions such as the deposition methods, chamber pressure, and substrate temperature. [8][9][10] Furthermore, it was suggested by Cong et al 11 recently that the Al doping can induce an enhancement of p -d coupling in ZnO. However, no theoretical study has been presented and the origin of the effect of Al doping on electrical properties is still not clear.…”

mentioning

confidence: 99%

The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

Chun¹,

Abid

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

We investigated the effect on the electronic properties of aluminum ͑Al͒-zinc oxide ͑ZnO͒ films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation ͑LDA͒ and LDA+ U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p -Zn 3d coupling and the modification of the Zn 4s -O 2p interaction in ZnO induced by Al doping. © 2010 American Institute of Physics. ͓doi:10.1063/1.3483232͔The zinc oxide ͑ZnO͒ film has received considerable attention recently due to its potential application as a transparent and conductive coating material. 1,2 ZnO is an n-type wide band gap ͑3.3 eV at room temperature͒ semiconductor, and its electrical conductivity dominated by Zn interstitial atoms and oxygen vacancies. The large exciton binding energy ͑BE͒ ͑60 meV͒ and band gap energy of ZnO can be tuned by doping with appropriate elements to enhance its optical and electrical performance. To get a low resistivity as well as a high transmittance in the visible region, the ZnO is usually doped with group III elements such as aluminum ͑Al͒, indium ͑In͒, gallium ͑Ga͒, and boron ͑B͒. 3-5 Doped ZnO has similar electrical and optical properties to indium tin oxide but it is also much cheaper, more temperature stable, and moreover it is nontoxic.In the group III element, Al is considered as the most promising dopant. The highest conductivity values have been found in films with an Al concentration of 2-3 at. %. 6,7 When the ZnO is heavily doped with Al, however, the resistivity increases because of the depletion in carrier concentration due to reduction in the number of oxygen vacancies in Al-ZnO and the neutral impurity scattering due to formation of a sodium ͑Na͒ zeolite structure. 5,7 Many techniques have been employed to prepare Al-ZnO thin films, such as magnetron sputtering, 8 pulsed laser deposition, 9 and chemical deposition. 10 It was found that the properties of Al-ZnO films are strongly dependent upon the preparation conditions such as the deposition methods, chamber pressure, and substrate temperature. 8-10 Furthermore, it was suggested by Cong et al. 11 recently that the Al doping can induce an enhancement of p -d coupling in ZnO. However, no theoretical study has been presented and the origin of the effect of Al doping on electrical properties is still not clear. 12,13 Here, in this letter, we systematically investigated the effect of radio frequency ͑rf͒ sputtering power on the electrical properties of Al-doped ZnO films. Our experiments show that by increasing the sputtering power, the Al doping concentration is increased, which decreases the resistivity and also moves the Zn 2p and O 1s to high BEs energy states. Our local-density approximation ͑LDA͒ and LDA+ U calculations clearly show that the Al doping enhances the p -d coupling and ...

show abstract

Properties of ZnO thin films prepared by reactive evaporation

Cited by 62 publications

References 2 publications

Caracterización fisicoquímica del sistema Mo/CuInS2/Zn(O,OH)S/ZnO por medio de espectroscopía fotoelectrónica XPS y AES

Caracterización fisicoquímica del sistema Mo/CuInS2/Zn(O,OH)S/ZnO por medio de espectroscopía fotoelectrónica XPS y AES

In situ thermo‐TOF‐SIMS study of thermal decomposition of zinc acetate dihydrate

The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films

Contact Info

Product

Resources

About