2004
DOI: 10.1016/j.jallcom.2003.07.005
|View full text |Cite
|
Sign up to set email alerts
|

Propertiesofstrainedzinc-blendeGaN:first-principlesstudy

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

3
8
0

Year Published

2004
2004
2023
2023

Publication Types

Select...
8
1
1

Relationship

0
10

Authors

Journals

citations
Cited by 46 publications
(11 citation statements)
references
References 39 publications
3
8
0
Order By: Relevance
“…Using the derived theoretical relations for fitting our experimental results, we found that in c-GaN the sign of the bandgap variation with pressure, @E g /@P, is the same as that of the sum (n GaN þ @n GaN =@g zz ). This finding is in accordance with earlier existing theoretical predictions 31,[35][36][37][38] and experimental observations 39 that @E g /@P is positive and @n/@P is negative, thus @n/@g zz is positive. It is worth mentioning that the theoretically predicted negative value of @n/@P are obtained for the transparency region of c-GaN, 31,36,37 hence can be applied to evaluate the sign of @n/@P for our probe radiation, which is below the bandgap of c-GaN.…”
supporting
confidence: 93%
“…Using the derived theoretical relations for fitting our experimental results, we found that in c-GaN the sign of the bandgap variation with pressure, @E g /@P, is the same as that of the sum (n GaN þ @n GaN =@g zz ). This finding is in accordance with earlier existing theoretical predictions 31,[35][36][37][38] and experimental observations 39 that @E g /@P is positive and @n/@P is negative, thus @n/@g zz is positive. It is worth mentioning that the theoretically predicted negative value of @n/@P are obtained for the transparency region of c-GaN, 31,36,37 hence can be applied to evaluate the sign of @n/@P for our probe radiation, which is below the bandgap of c-GaN.…”
supporting
confidence: 93%
“…1 Nitrides ͑in particular, group III and IV elements͒ are used in numerous applications such as optoelectronic ͑light-emitting diodes and semiconducting lasers͒. Among the group III elements that form nitrides, AlN and GaN have already attracted much of our attention since 2003, [2][3][4][5] and we have covered their physical, structural, and electronic properties using different theoretical methods.…”
mentioning
confidence: 99%
“…The Charpin method is used for the values of CdTm 2 Y 4 (Y = S, Se), elastic constants (C 11 , C 12 , and C 44 ), and other related parameters . By substituting the values of elastic constants obtained from the Charpin method in the given equations, the values of various parameters (bulk modulus B , Young’s modulus E , shear modulus G , and anisotropy factor (A)) and Poisson’s ratio (υ) for the Pugh ratio (B/G) for the cubic spinels CdTm 2 S 4 or CdTm 2 Se 4 have been evaluated where and …”
Section: Resultsmentioning
confidence: 99%