Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation

Abstract

In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

“…Адсорбция органических молекул применялась для изменения электронных свойств поверхностей полупроводников А III В V [133,[145][146][147] и модификации характеристик полупроводниковых приборов [139,144,[148][149][150]. Однако в основном адсорбция органических молекул используется для химической пассивации, т. е. для стабилизации поверхности полупроводников А III В V в атмосфере, растворах электролитов и в физиологических растворах с целью создания биоинтерфейсов [151][152][153][154], а также для обеспечения биосовместимости полупроводников А III В V [151,155,156] и приборов на их основе [157].…”

Self-Assembled 1-Octadecanethiol Membrane on Pd/ZnO for a Selective Room Temperature Flexible Hydrogen Sensor

“…This simple process of the formation of the monolayers makes it technologically attractive for surface engineering applications [18]. In addition, it was reported that the use of 1-octadecanethiol could enhance the stability of a semiconductor device in exposure to air due to the sulfur layer [19].…”