2009
DOI: 10.1149/1.3156652
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Property of Highly Oriented SrAl[sub 2]O[sub 4]:Eu Film on Quartz Glass Substrates and Its Potential Application in Stress Sensor

Abstract: In this paper, a high crystalline SrAl2normalO4:Eu film has been deposited on the quartz glass substrate using the radio-frequency magnetron sputtering method. The crystallinity and surface morphology of the SrAl2normalO4:Eu film were characterized by IR spectroscopy, X-ray diffraction (XRD), scanning electron microscopy, and atomic force microscopy (AFM). The XRD result indicated that the obtained film was (0 3 1) fiber textured, and the AFM result showed that the film surface was smooth and compact. The … Show more

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Cited by 37 publications
(19 citation statements)
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“…There is a possibility that the macroscopic or bulk piezoelectric field may cause detrapping of the charge carriers and subsequent capture of electrons with the excited state of activator ions or recombination of holes with reduced state of the activator ions may cause the light emission [10,7,[11][12][13]. Generally, the piezoelectric constant d of the crystals is of the order of 10 Â 10 À 12 C N À 1 , and the threshold pressure P th for the EML emission is nearly 10 6 N m À 2 .…”
Section: Mechanism Of Elastico-mechanoluminescencementioning
confidence: 99%
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“…There is a possibility that the macroscopic or bulk piezoelectric field may cause detrapping of the charge carriers and subsequent capture of electrons with the excited state of activator ions or recombination of holes with reduced state of the activator ions may cause the light emission [10,7,[11][12][13]. Generally, the piezoelectric constant d of the crystals is of the order of 10 Â 10 À 12 C N À 1 , and the threshold pressure P th for the EML emission is nearly 10 6 N m À 2 .…”
Section: Mechanism Of Elastico-mechanoluminescencementioning
confidence: 99%
“…The EML measurement induced by impact stress has been made only for the thin films of ZnS and SrAl 2 O 4 :Eu, in which EML has been excited by dropping a small ball from a low height [13,15]. If E c is the characteristic piezoelectric field, that is, the field needed for reducing the total number of filled electron traps n t0 in the high piezoelectric region near the activators to n t0 /e (where e is the base of natural logarithm), caused by the detrapping due to localized piezoelectric field, then the number n t of the filled electron traps at any time t can be expressed by the following equation…”
Section: 1 Rise Of Eml Intensitymentioning
confidence: 99%
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