Proposal of Lithography using LB Film Resist and EBEP Etching.

Abstract

Lithography using Langmuir-Blodgett (LB) E-beam resist and E-beam excited plasma (EBEP) etching is proposed to realize a fine pattern smaller that 100 nm. 20 monolayer thick arachidic acid (CH3(CH2)i8C00H) films have been formed using LB technique. These films are exposed to &beam at 50 kV for doses from 2000 µC/cm2 to 22000 µC/cm2. The as-exposed films are observed by SEM and AFM. The negative pattern at 2000 µC/cm2 was reversed to a positive pattern at 22000 µC/cm2. The pattern reversal phenomena are discussed.

Poly(N-alkylmethacrylamide) LB Films with Short-Branched Alkyl Side Chains for a Self-Developed Positive Photoresist

“…[2][3][4][5][6][7][8] Since the LB technique is one of the most effective ways of forming a molecularly ordered ultrathin film of controlled thickness and orientation, LB films should realize ultrahigh-resolution photolithography. [9][10][11][12] Barraud et al obtained fine negative patterns on LB film by electron beam polymerization using ω-tricosenoic acid. 13 Ringsdorf et al studied the photopolymerization of octadiene and docosadiene derivatives.…”

“…Features with dimensions below 100 nm are difficult to resolve. We have continued to investigate the application of Langmuir−Blodgett (LB) films to a new resist film instead of using conventional spin-coat films. − Since the LB technique is one of the most effective ways of forming a molecularly ordered ultrathin film of controlled thickness and orientation, LB films should realize ultrahigh-resolution photolithography. − Barraud et al obtained fine negative patterns on LB film by electron beam polymerization using ω-tricosenoic acid . Ringsdorf et al studied the photopolymerization of octadiene and docosadiene derivatives .…”