Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S2

Miyatake, Yuto; Makino, Kotaro; Tominaga, Junji; Miyata, Noriyuki; Nakano, Takashi; Okano, Makoto; Toprasertpong, Kasidit; Takagi, Shinichi; Takenaka, Mitsuru

doi:10.1109/ted.2023.3235865

Cited by 10 publications

(2 citation statements)

References 40 publications

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“…[54] Moreover, photonic applications also stipulate performance requirements distinct from those in electronic memories, such as low optical attenuation and, in some cases, moderate crystallization speed. [44] Therefore, a series of new PCM compositions tailored for photonic applications exemplified by Ge 2 Sb 2 Se 4 Te (GSST), [55][56][57] Sb 2 S 3 , [58] Sb 2 Se 3 , [59] Ge 2 Sb 2 Te 3 S 2 , [60] and In 3 SbTe 2 [61,62] have been developed in recent years. Compared to the archetypal GST family, the structural, kinetic, thermal, and cycling characteristics of these emerging optical PCMs are much less understood.…”

Section: Introductionmentioning

confidence: 99%

An Open‐Source Multifunctional Testing Platform for Optical Phase Change Materials

Popescu,

Dao,

Ranno

et al. 2023

Small Science

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Owing to their unique tunable optical properties, chalcogenide phase change materials are increasingly being investigated for optics and photonics applications. However, in situ characterization of their phase transition characteristics is a capability that remains inaccessible to many researchers. Herein, a multifunctional silicon microheater platform capable of in situ measurement of structural, kinetic, optical, and thermal properties of these materials is introduced. The platform can be fabricated leveraging industry‐standard silicon foundry manufacturing processes. This platform is fully open‐sourced, including complete hardware design and associated software codes.

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Section: Introductionmentioning

confidence: 99%

An Open‐Source Multifunctional Testing Platform for Optical Phase Change Materials

Popescu,

Dao,

Ranno

et al. 2023

Small Science

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“…The use of low-loss phase-change materials (PCMs) such as Sb 2 Se 3 is actively being investigated. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] The phase transition of PCM provides a nonvolatile change in the refractive index, but the electrical switching through Joule heating typically requires a high voltage when switching the PCM from the crystalline state to the amorphous state, [17] making it incompatible with CMOS drivers. Another approach involves using ferroelectric materials such as barium titanate (BTO), integrated into the waveguide to achieve a nonvolatile phase shift via the Pockels effect.…”

Section: Introductionmentioning

confidence: 99%

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Tang,

Watanabe,

Fujita

et al. 2023

Laser & Photonics Reviews

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Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PICs. Non‐volatile phase shifters, which can retain information without a power supply, are highly desirable for low‐power static operations. Here a non‐volatile optical phase shifter is demonstrated by driving a III‐V/Si hybrid metal‐oxide‐semiconductor (MOS) phase shifter with a ferroelectric field‐effect transistor (FeFET) operating in the source follower mode. Owing to the various polarization states in the FeFET, multistate non‐volatile phase shifts up to 1.25π are obtained with CMOS‐compatible operation voltages and low switching energy up to 3.3 nJ. Furthermore, a crossbar array architecture is proposed to simplify the control of non‐volatile phase shifters in large‐scale PICs and verify its feasibility by confirming the selective write‐in operation of a targeted FeFET with a negligible disturbance to the others. This work paves the way for realizing large‐scale non‐volatile programmable PICs for emerging computing applications such as deep learning and quantum computing.

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Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Taki,

Sekine,

Watanabe

et al. 2024

Nat Commun

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A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as BaTiO3 offer nonvolatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor fabs is limited. Hf0.5Zr0.5O2 is an emerging ferroelectric material, which exhibits complementary metal-oxide-semiconductor compatibility. Although extensively studied for ferroelectric transistors and memories, its application to photonics remains relatively unexplored. Here, we show the optical phase shift induced by ferroelectric Hf0.5Zr0.5O2. We observed a negative change in refractive index at a 1.55 μm wavelength in a pristine device regardless of the direction of the applied electric field. The nonvolatile phase shift was only observed once in a pristine device. This non-reversible phase shift can be attributed to the spontaneous polarization within the Hf0.5Zr0.5O2 film along the external electric field.

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Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge₂Sb₂Te₃S₂

Cited by 10 publications

References 40 publications

An Open‐Source Multifunctional Testing Platform for Optical Phase Change Materials

An Open‐Source Multifunctional Testing Platform for Optical Phase Change Materials

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

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