Proposal of total-internal-reflection optical switch with slowing light in Bragg reflector waveguide

Koyama, Fumio

doi:10.1587/elex.5.349

Cited by 15 publications

(13 citation statements)

References 9 publications

(9 reference statements)

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“…TIR switches have been fabricated on many types of material [8,11,12] . Due to the large carrier injection induced refractive index change, the TIR switch based on the compound semiconductor has large intersectional angle, thus the device has more compact structure.…”

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confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 μm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.optical switch, total internal reflection, multimode interference, carrier injection Optical fiber communication technology has become the backbone of modern communication network, and formed enormous applications. As a key component of optical fiber communication system, optical switch and its array have been the focus of research and development [1] . High-speed optical switch and its large-scale arrays are essential for optical network based on optical packet switching (OPS). By employing various physical effects and technology, many types of optical switch have been developed. Among them, apart from the most traditional mechanical optical switches, there are many commercial products, e.g. the micro electro mechanical system (MEMS) based switch, the silica or organic polymer based waveguide switch, and the liquid crystal based switch. They have good performances in extinction ratio, insertion loss, polarization dependence and integration. However, most of them have a low switching speed, a magnitude of milliseconds (ms) typically. OPS based network requires that the switching speed reaches a magnitude of nanoseconds (ns), thus the high-speed optical switch and its arrays are very attractive.Compound semiconductor materials are used widely for high-speed microelectronic integrated devices. Besides, they are important material for optoelectronic devices and high-speed optical waveguide devices. Compound semiconductor is a promising platform for the optical and electronic integrated circuits (OEIC). In the past 30 years, GaAs and InP-based compound semiconductor materials have played an important role in integrated optical devices [2] , especially in the development of high-speed optical switch [3] . Compound semiconductor based high optical switch mainly employ the electrooptic effect, and the carrier injection effect [4][5][6][7][8] . Because of the small electro-optic coefficient, switches based on electro-optic effect usually have large size or high driving voltage. On the other hand, similar to the electro-optic effect of LiNbO 3 , the electro-optic coefficient of compound semiconductor is polarization-dependent as well. In the communication wavelength range of 1.31-1.55 μm, the refractive index change induced by the carrier injection effect is about two orders of magnitude greater than that by the electro-optic effect, and it is very easy to obtain a refractive index change as large as

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confidence: 99%

Research of high speed optical switch based on compound semiconductor

Wang

Wei

et al. 2009

Chin. Sci. Bull.

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“…We also proposed an ultra-compact slow light optical switch with giant refractive index changes as shown in Fig. 18 [48,49]. In addition, simple coupling scheme with slow light in Bragg waveguides would also be useful for various slow light photonic circuits involving optical switches, amplifiers, lasers and so on.…”

Section: Slow Light Optical Devicesmentioning

confidence: 99%

VCSEL photonics -advances and new challenges-

Koyama

2009

IEICE Electron. Express

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Abstract:We had the 30-year anniversary since a VCSEL was invented by Kenichi Iga, Tokyo Institute of Technology. We have seen various applications including datacom, sensors, optical interconnects, spectroscopy, optical storages, printers, laser displays, laser radar, atomic clock, optical signal processing and so on. A lot of unique features have been proven, low power consumption, a wafer level testing and so on. In this paper, the brief history and our recent research activities on VCSEL photonics will be reviewed. We present the wavelength engineering of VCSEL arrays for use in high speed short-reach systems, which includes the wavelength integration and wavelength control. The joint research project on ultra-parallel optical links based on VCSEL technologies will be introduced for high speed LANs of 100 Gbps or higher. The small footprint of VCSELs allows us to form a densely packed VCSEL array both in space and in wavelength. The wavelength engineering of VCSELs may open up ultra-high capacity networking. Highly controlled multi-wavelength VCSEL array and novel multi-wavelength combiners are developed toward Terabit/s-class ultrahigh capacity parallel optical links. In addition, the MEMS-based VCSEL technology enables widely tunable operations. We demonstrated an "athermal VCSEL" with avoiding temperature controllers for uncooled WDM applications. In addition, new functions on VCSELs for optical signal processing are addressed. We present an optical nonlinear phase shifter based on a VCSEL saturable absorber and the tunable optical equalization function.Also, highly reflective periodic mirrors commonly used in VCSELs enables us to manipulate the speed of light. This new scheme provides us ultra-compact intensity modulators, optical switches and so on for VCSEL-based photonic integration. Also, this paper explores plasmonic VCSELs. Vol.6, No.11, 651-672 nol. Lett., vol. 11, no. 8, pp. 946-948, Aug. 1999 Commun., vol. 208, pp. 173-182, July 2002. [28] H. Kawaguchi, Y. Yamayoshi, and K. Tamura, "All-optical format conversion using an ultrafast polarization bistable vertical-cavity surfaceemitting laser," Proc. CLEO 2000, CWU2, pp. 379-380, 2000. namic behavior of an all-optical inverter using transverse-mode switching in 1.55-μm vertical-cavity surface-emitting lasers," IEEE Photon.

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“…The low down factor f is written by the following equation (1), where n is the refractive index of the core, n g is the group index, and v g is the group velocity. The slow down factor f increases rapidly near the cut-off wavelength, while the waveguide dispersion also increases, resulting in a narrow available wavelength bandwidth [4]. We can increase the wavelength bandwidth when the slope of f, df/dλ, is reduced.…”

Section: Coupled Bragg Reflector Waveguidesmentioning

confidence: 99%

“…A liner band can be seen in some frequency region in the main mode. It is also noted that our slow light waveguide is polarization independent, which is difficult in 2D photonic crystals [4], because slow light propagates almost vertically near the cut-off wavelength. The main mode is dominantly confined within an InGaAsP core until the band edge of the higher order mode as shown in Fig.…”

Section: Coupled Bragg Reflector Waveguidesmentioning

confidence: 99%