Prospects for rare earth doped GaN lasers on Si

Steckl, A. J.; Park, Jeong Ho; Zavada, J. M.

doi:10.1016/s1369-7021(07)70176-1

Cited by 99 publications

(63 citation statements)

References 36 publications

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“…III-nitride semiconductors, such as AlN, GaN, and InN, offer tunable bandgaps and favorable thermal, chemical, and electronic properties, which facilitate various device applications [5][6][7][8][9] from the ultraviolet through the visible spectrum to the infrared range. Moreover, thin film electroluminescent phosphors with red, blue, and green emissions [7][8][9][10][11][12][13][14][15] imply the promise of full color (white) light capability. Rare earth doping GaN might have a number of advantages: there is the promise that Eu or Er doping will improve the light output.…”

Section: Introductionmentioning

confidence: 99%

“…Although likely to locally strain the lattice, the 4f rare earths will tend to adopt substitutional sites for Ga [1, 2,26] in GaN while significantly altering magnetic [27][28][29][30][31][32][33][34] and optical properties [7][8][9][10][11][12][13][14], and it is therefore of considerable interest to know whether even low concentrations of a rare earth in the GaN host can alter the surface electronic structure. This is likely, as although rare earths are isoelectronic with Ga 3+ , they may be associated with other defects [35,36].…”

Section: Introductionmentioning

confidence: 99%

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Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f 14 occupancy.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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“…The low efficiency is a result of difficulties in growing high quality material with high InN contents of the InGaN active layers and problems caused by the quantum confined Stark effect in polar heterostructures. 3 Recently, laser action in GaN:Eu upon optical pumping 4 and the first low-voltage operation of current-injected red emission from a GaN:Eu LED ͑Ref. 5͒ were demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Magalhães

Peres

Fellmann

et al. 2010

Journal of Applied Physics

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Self-assembled GaN quantum dots ͑QDs͒ stacked in superlattices ͑SL͒ with AlN spacer layers were implanted with Europium ions to fluences of 10 13 , 10 14 , and 10 15 cm −2 . The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the ͓0001͔ direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000°C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu 3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu 3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the AlN-buffer, capping, and spacer layers is observed.

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“…This is mainly due to 5 D 0,1 → 7 F J͑0-4͒ multiplet transitions in several insulator and wide band gap semiconductor hosts like GaN-based materials, 26,27 for which a highly efficient Eu 3+ related electroluminescent device was recently reported. 28 Regardless the synthesis technique and polytype in zirconia host doped with europium ions, optical activation was achieved, allowing the observation of the 5 D 0,1 → 7 F J transitions mainly in nano/micro polycrystalline samples.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of europium doped zirconia single crystals fibers grown by laser floating zone

Soares

Nico

Peres

et al. 2011

Journal of Applied Physics

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Yttria stabilized zirconia single crystal fibers doped with europium ions were developed envisaging optical applications. The laser floating zone technique was used in order to grow millimetric high quality single crystal fibers. The as-grown fibers are completely transparent and inclusion free, exhibiting a cubic structure. Under ultraviolet ͑UV͒ excitation, a broad emission band appears at 551 nm. The europium doped fibers are translucent with a tetragonal structure and exhibit an intense red emission at room temperature under UV excitation. The fingerprint transition lines between the 5 D 0 and 7 F J͑0-4͒ multiplets of the Eu 3+ ions are observed with the main emission line at ϳ606 nm due to 5 D 0 → 7 F 2 transition. Photoluminescence excitation and wavelength dependent the photoluminescence spectra confirm the existence of different Eu 3+ optical centers.

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Prospects for rare earth doped GaN lasers on Si

Cited by 99 publications

References 36 publications

Resonant photoemission of rare earth doped GaN thin films

Resonant photoemission of rare earth doped GaN thin films

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

Structural and optical properties of europium doped zirconia single crystals fibers grown by laser floating zone

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