1994
DOI: 10.1109/50.350619
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Prospects for silicon monolithic opto-electronics with polymer light emitting diodes

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Cited by 27 publications
(9 citation statements)
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“…[32,33] PPV prepared under these conditions has higher fluorescence and EL quantum efficiencies. [35] Our own experience is that a nitrogen atmosphere suffices. When conducting the elimination step under argon, Schwoerer et al [36,37] found that conversion already occurred at 160 8C.…”
Section: First Author Topicmentioning
confidence: 99%
“…[32,33] PPV prepared under these conditions has higher fluorescence and EL quantum efficiencies. [35] Our own experience is that a nitrogen atmosphere suffices. When conducting the elimination step under argon, Schwoerer et al [36,37] found that conversion already occurred at 160 8C.…”
Section: First Author Topicmentioning
confidence: 99%
“…In the early 1990s Kim and co-workers made a series of reports [38][39][40] describing the use of polymer OLEDs integrated on silicon substrates containing bipolar active circuits and photo receivers; the application was photonic switching and optical interconnect rather than displays.…”
Section: Small-molecule Oled (Smoled) On Silicon Devicesmentioning
confidence: 99%
“…6 An n ϩ /p-substrate photodiode in a bipolar OEIC achieved a data rate of 150 Mbit/s. 7 Yamamoto et al 8 and Kyomasu 9 have also integrated pin photodiodes with bipolar transistor technology. The optical receivers described in their articles demonstrated a data rate 8 of 50 Mbit/s and a frequency response 9 of 147 MHz at a supply voltage of 5 V, although the pin photodiodes showed bandwidths of Ϸ300 MHz at a bias of 3 V. A thin p ϩ /n-collector/n ϩ -buried-collector pin photodiode in a BiCMOS process was used together with a MOS amplifier with a rather low responsivity of the photodiode.…”
Section: Introductionmentioning
confidence: 98%