Prospects for the ammonothermal growth of large GaN crystal

Fukuda, Tsuguo; Ehrentraut, Dirk

doi:10.1016/j.jcrysgro.2007.04.010

Cited by 74 publications

(53 citation statements)

References 36 publications

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“…Fukuda and Ehrentraut [7][8][9] grew 0.5-mm-thick GaN on a 1-inch HVPE seed at growth temperature of about 500°C and pressure of less than 130 MPa. The growth rate was about 0.04 mm/day.…”

Section: Introductionmentioning

confidence: 99%

Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems

et al. 2011

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Gallium nitride (GaN) is a wide-bandgap semiconductor material with a wide array of applications in optoelectronics and electronics. Modeling of the fluid flow and thermal fields is discussed, and simulations of velocity and volumetricflow-rate profiles in different pressure systems are shown. The nutrient is considered as a porous media bed, and the flow is simulated using the Darcy-BrinkmanForchheimer model. The resulting governing equations are solved using the finitevolume method. We analyzed the heat and mass transfer behaviors in autoclaves with diameters of 2.22, 4.44, and 10 cm. The effects of baffle design on flow pattern, and heat and mass transfer in different autoclaves are analyzed. For the research-grade autoclave with diameter of 2.22 cm, the constraint for the GaN growth is found to be the growth kinetics and the total area of seed surfaces in the case of baffle opening of 10%. For large-size pressure systems, the concentration profiles change dramatically due to stronger convection at higher Grashof numbers. The volumetric flow rates of the solvent across the baffles are calculated. Since ammonothermal growth experiments are expensive and time consuming, modeling becomes an effective tool for research and optimization of ammonothermal growth processes.

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“…Fukuda and Ehrentraut [7][8][9] grew 0.5-mm-thick GaN on a 1-inch HVPE seed at growth temperature of about 500°C and pressure of less than 130 MPa. The growth rate was about 0.04 mm/day.…”

Section: Introductionmentioning

confidence: 99%

Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems

et al. 2011

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“…The authors consider two possible mechanisms of GaN growth -direct reaction of GaLi 3 N 2 with gallium and dissolution of GaLi 3 N 2 in Li-Ga melt to form ternary system -and conclude that the latter is the one that is most probable. The growth rate of GaN in the ammonothermal technique is rather small (not greater than 2µ/hour (Fukuda & Ehrebtraut, 2007)). Frequently a columnar growth occurs yielding the crystals of poor quality (Waldrip, 2007;Wang et al , 2001a).…”

Section: Ammonothermal Growth and Flux Growthmentioning

confidence: 95%

Development of 2" AlN Substrates Using SiC Seeds

Avdeev¹,

Chemekova²,

Мохов³

et al. 2012

Modern Aspects of Bulk Crystal and Thin Film Preparation

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“…These properties combined with good thermal conductivity and stability which makes them as attractive materials for higher temperatures, higher power densities and higher voltages to utilize in future electrooptic systems [4].…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic Analysis of ZnO Crystal Growth from the Melt

Asadian¹

2013

JCPT

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Recently, the efforts in solid-state materials include developing technologies capable of producing ZnO wafers in large dimensions and good quality based device applications. High quality bulk crystals are obtained by growing from high purity the melt. However, the thermochemical properties of ZnO (high melting point and high vapor pressure) make the growth of single crystals difficult. The thermodynamic calculations show that ZnO crystals can be grown from the melt if a suitable dynamic atmosphere composition is used. The oxygen requirement with increasing the temperature can be fulfilled by adding the NO-NO 2 gases into the CO 2 atmosphere. At ZnO melting point, the oxygen partial pressure of gas mixtures containing CO 2 -NO-CO-NO 2 at Pt = 5 atm reaches to PO 2 = 0.29 atm. According to this new thermodynamic result, it would be expected that ZnO crystal could be grown from the melt at lower total pressure comparing to pure CO 2 .

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Prospects for the ammonothermal growth of large GaN crystal

Cited by 74 publications

References 36 publications

Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems

Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems

Development of 2" AlN Substrates Using SiC Seeds

Thermodynamic Analysis of ZnO Crystal Growth from the Melt

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