Prospects for the synthesis of large single-crystal diamonds

Khmelnitskiy, R.A.

doi:10.3367/ufne.0185.201502b.0143

Cited by 48 publications

(15 citation statements)

References 120 publications

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“…Despite significant progress in HPHT technology, electronic quality material is difficult to create due to the low purity of the material and growth technology complexity. Large‐size single‐crystal growth using this method requires a large‐size high‐pressure apparatus, the cost and technical complexity of which increase sharply with the growth chamber's linear size increase . In semiconductor technology, HPHT single crystals are used mainly as substrates for CVD homoepitaxy.…”

Section: Introductionmentioning

confidence: 99%

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

Черных

Тарелкин

et al. 2020

Physica Status Solidi (a)

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Various samples of multisectoral high‐pressure high‐temperature (HPHT) single‐crystal diamond plate (IIa type) (4 × 4 × 0.53 mm) are tested for particle detection applications. The samples are investigated by X‐ray diffractometry, photoluminescence spectroscopy, Raman spectroscopy, Fourier‐transform infrared, and visible/ultraviolet (UV) absorption spectroscopy. High crystalline perfection and low impurity concentration (in the {100} growth sector) are observed. To investigate detector parameters, circular 1.0 and 1.5 mm diameter Pt Schottky barrier contacts are created on {111} and {100} growth sectors. On the backside, a Pt contact (3.5 × 3.5 mm) is produced. The {100} growth sector is proved to be a high‐quality detector: the full width at half maximum energy resolution is 0.94% for the 5.489 MeV 226Ra α‐line at an operational bias of +500 V. Therefore, it is concluded that the HPHT material {100} growth sector is used for radiation detector production, whose quality is not worse than the chemical vapor deposition method or specially selected natural diamond detectors.

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Section: Introductionmentioning

confidence: 99%

High‐Pressure High‐Temperature Single‐Crystal Diamond Type IIa Characterization for Particle Detectors

Черных

Тарелкин

et al. 2020

Physica Status Solidi (a)

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“…For activation of carbon-containing gas, thermal methods (hot-filament) or electric discharge (DC, RF, or microwave) are usually applied. Thermal activation of precursor gases by a hot filament (HF) is widely used to produce synthetic diamond structures [1,[10][11][12][13]. The advantages of this method are its low cost, simplicity, scalability, and ability to use it to coat surfaces of complex relief.…”

Section: Introductionmentioning

confidence: 99%

Structure of Diamond Films Grown Using High-Speed Flow of a Thermally Activated CH4-H2 Gas Mixture

et al. 2020

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Diamond films are advanced engineering materials for various industrial applications requiring a coating material with extremely high thermal conductivity and low electrical conductivity. An approach for the synthesis of diamond films via high-speed jet deposition of thermally activated gas has been applied. In this method, spatially separated high-speed flows of methane and hydrogen were thermally activated, and methyl and hydrogen radicals were deposited on heated molybdenum substrates. The morphology and structure of three diamond films were studied, which were synthesized at a heating power of 900, 1700, or 1800 W, methane flow rate of 10 or 30 sccm, hydrogen flow rate of 1500 or 3500 sccm, and duration of the synthesis from 1.5 to 3 h.The morphology and electronic state of the carbon on the surface and in the bulk of the obtained films were analyzed by scanning electron microscopy, Raman scattering, X-ray photoelectron, and near-edge X-ray absorption fine structure spectroscopies. The diamond micro-crystals with a thick oxidized amorphous sp2-carbon coating were grown at a heating power of 900 W and a hydrogen flow rate of 1500 sccm. The quality of the crystals was improved, and the growth rate of the diamond film was increased seven times when the heating power was 1700–1800 W and the methane and hydrogen flow rates were 30 and 3500 sccm, respectively. Defective octahedral diamond crystals of 30 μm in size with a thin sp2-carbon surface layer were synthesized on a Mo substrate heated at 1273 K for 1.5 h. When the synthesis duration was doubled, and the substrate temperature was decreased to 1073 K, the denser film with rhombic-dodecahedron diamond crystals was grown. In this case, the thinnest hydrogenated sp2-carbon coating was detected on the surface of the diamond crystals.

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“…Single-crystal diamond (scdiamond) as well as polycrystalline diamond on silicon (pcdiamond, or CVD diamond) XBPMs are now commercially available (DECTRIS, CIVIDEC). The desired device properties of sc-diamond are not obtained on a commercial scale due to the use of thick substrates with high absorption, and availability of samples only smaller than 10 mm Â 10 mm (Khmelnitskiy, 2015). Improving transparency by thinning down the thick substrates and fabricating membranes encounters challenges.…”

Section: Introductionmentioning

confidence: 99%