PROSPECTS FOR USING GUNN DIODES BASED ON GaN, AlN AND InN

Graded-gap AlInN Gunn diodes

“…Among semiconductor nitrides with a hexagonal crystal lattice (wurtzite modification), InN possesses the maximum drift velocity of electrons and the minimum threshold value of the electric field [1][2][3]8]. InN concedes to GaN and AlN as to inertial properties of IET and the probability of IET overlap by impact ionization.…”

“…InN concedes to GaN and AlN as to inertial properties of IET and the probability of IET overlap by impact ionization. According to estimations [6,8], TED based on InN should be of a better performance in the near-terahertz range.…”

“…Good inertial properties and high drift velocities of charge carriers are mentioned in all publications. In a number of studies [5][6][7][8][9], numerical experiments on the microwave generation using Gunn diodes (TED, transfer electron device) based on semiconductor nitrides have been carried out. The above studies show prospects of such devices for a terahertz range.…”

“…As far as we know, there are no researches on experimental microwave generation based on the IET effect. The primary problem that does not allow obtaining the microwave generation is to remove heat from the active region of the device [8,9]. Another important unresolved problem is the heating the electron gas at the cathode contact.…”

“…Another important unresolved problem is the heating the electron gas at the cathode contact. The means proved to be successful with TED based on GaAs or InP turned out to be inefficient for semiconductor nitrides [8]. One of the weakly-studied directions in the area of TED creation is the use of gradedgap semiconductor compounds that can overcome the need of heating to some extent for the electron gas at the cathode [12][13][14][15].…”