Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz

Abstract

The potentials of 6H-SiC are explored for application as a high power IMPATT diode through computer simulation experiment. It is observed that the new material would far surpass its present rivals Si and GaAs in terms of power output at 140 GHz. However, excessive noise would put a severe restriction on the applicability of 6H-SiC for high-efficiency IMPATT structures.

Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

“…The diode active layer width is divided into several number of space points with a space step of 1 nm. The DC analysis is first done by solving simultaneously three important device equations namely Poisson's equation, the carrier continuity equation and the space charge equation using a double iterative DC simulation program [3]. The simulation takes into account the contribution from each space point and effectively determines DC electric field profiles, carrier current profiles, breakdown voltage etc.…”

“…It can be realized from most of the semiconductor materials. Simulation has been an important tool for performance analysis of IMPATT devices [1][2][3][4][5][6][7][8][9][10]. The quality and acceptability of the simulation results mostly depends upon the quality of material data used for the same.…”

MM-wave characteristics of SiC-based IMPATT oscillators

“…A one dimensional double drift IMPATT diode has been shown in figure 1. The simulation methods start with the DC analysis by taking the recent experimental parameters like ionization rate, drift velocity, mobility and the permittivity of both the materials 4H-SiC and 6H-SiC [3][4][5][6][7].Since two materials has different ban-gap so the material parameters is also different for both the materials. Two advanced level computer programs involving double iterations have been framed to solve the device equations with usual boundary conditions [8].…”

High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

“…Their results show that this diode exhibits high efficiency and high power as expected, compared to Si and GaAs IMPATT diodes. Pattanaik et al [9] have reported the results of 6H-SiCbased DDR IMPATT diode performance with respect to DC and microwave power as well as noise characteristics and have compared the results obtained with those of Si-and GaAs-based IMPATT diodes under similar operating conditions at the D-band. But, there is no report on performance of SiC Mixed Tunnelling Avalanche Transit Time diode in the THz range except that in [5].…”