Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review

Abstract

REVIEWThis section of Journal of Materials Research is reserved for papers that are reviews of literature in a given area.Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review Next-generation fission and fusion nuclear reactor materials will be exposed to very high temperatures, intense neutron radiation, corrosive environments, and, mostly, all three at once. Grand opening will be given to the material, if they have stability at high temperature operating favorable in the extreme environments, self-healing, thermal as well as irradiation properties. Owing to the superior properties of silicon carbide, nuclear scientists are closely evaluating SiC-based materials for various applications in nuclear reactors. In the present perspective, relevant properties, challenging issues, and recommendations are emphasized. Based on our recent experiments, attempt to solve various uses on SiC-based materials in nuclear applications is described in detail.

Surface stabilities of 3C–SiC and H2O adsorption on the (110) surface

“…The high‐purity low‐cost 3C–SiC is also commonly used for sintering superplasticity ceramics . More especially, cubic 3C–SiC is the most commonly used polytype of SiC in the nuclear fuel applications where 3C–SiC is inevitably in contact with H 2 O. A number of literatures have shown that H 2 O may affect the mechanical and physical properties of SiC.…”

Thermal Decomposition Mechanism of Tetraethylsilane by Flash Pyrolysis Vacuum Ultraviolet Photoionization Mass Spectrometry and DFT Calculations: The Competition between β-Hydride Elimination and Bond Homolysis

“…Silicon carbide (SiC) thin film, due to its excellent performance in physical, chemical, and electronic properties, has been widely applied in the electronic industry. − Using organosilanes as a single source precursor for the SiC thin film production in chemical vapor deposition (CVD) has become an improvement initiative. − Compared to using separate carbon and silicon precursors, using single source organosilane precursor, as the Si–C bond already exists, could avoid high temperatures, which are required for the formation of the Si–C bond in the gas phase between the carbon and silicon precursors, and therefore reduce the mismatches between Si and SiC in lattice constants and thermal expansion coefficients. , A number of organosilanes have been regarded as good candidates for CVD production of SiC; among them, tetraethylsilane (SiEt 4 ) has been considered as a popular precursor in various investigations of SiC thin film production using the CVD method. − …”

Understanding the adsorption behavior of oxygen on the 3C–SiC(1 1 0) surface: A first‐principles study

“…[3][4][5] More especially, the cubic 3C-SiC is the most promised polytype of SiC in the nuclear fuel applications. [6][7][8][9] During service in the previous applications, SiC is inevitable to be oxidized in the working environment and leads to severely degradation in performance. In addition, as a suitable material for high-temperature, high-power, and high-frequency electronic devices, SiC is the only compound semiconductor on which an insulator SiO 2 film with excellent electrical and thermochemical properties can be thermally grown by a controllable oxidation processing of SiC surfaces.…”

“…Similar to other polytypes, 3C–SiC shows high hardness, high stiffness, high thermal conductivity, and superior chemical inertness and is thus to be widely used as thermal structural material 3–5 . More especially, the cubic 3C–SiC is the most promised polytype of SiC in the nuclear fuel applications 6–9 . During service in the previous applications, SiC is inevitable to be oxidized in the working environment and leads to severely degradation in performance.…”