2017 Conference on Lasers and Electro-Optics Europe &Amp; European Quantum Electronics Conference (CLEO/Europe-EQEC) 2017
DOI: 10.1109/cleoe-eqec.2017.8086422
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Prospects of semiconductor terahertz pulse sources

Abstract: Extremely high pump-to-terahertz (THz) conversion efficiencies up to 0.7% were demonstrated in recent experiments with ZnTe THz pulse sources. Such high efficiencies could be achieved by pumping at an infrared wavelength sufficiently long to suppress both two-and three-photon absorption and the associated free-carrier absorption at THz frequencies. Here, highfield high-energy THz pulse generation by optical rectification in semiconductor nonlinear materials is investigated by numerical simulations. Basic desig… Show more

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Cited by 3 publications
(3 citation statements)
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“…The attempts to mitigate this problem by using contacting grating [7], stair-step echelons [8,9], and its combination with reflecting grating [10]) still do not result in the THz generation with energy or efficiency close to the abovementioned values. It is well established [11,12] that effective interaction length in the semiconductor materials such as ZnTe, GaP, and GaAs, can be significantly larger due to operation ability at smaller tilt angles < 30 and lower THz-wave absorption at room temperature. However, to escape 2nd-and 3rd-order multiphoton pump absorption (MPA), these materials have to be pumped at longer wavelengths p  1.7 m, where it is still relatively challenging to obtain femtosecond laser pulses with required high power.…”
Section: Introductionmentioning
confidence: 99%
“…The attempts to mitigate this problem by using contacting grating [7], stair-step echelons [8,9], and its combination with reflecting grating [10]) still do not result in the THz generation with energy or efficiency close to the abovementioned values. It is well established [11,12] that effective interaction length in the semiconductor materials such as ZnTe, GaP, and GaAs, can be significantly larger due to operation ability at smaller tilt angles < 30 and lower THz-wave absorption at room temperature. However, to escape 2nd-and 3rd-order multiphoton pump absorption (MPA), these materials have to be pumped at longer wavelengths p  1.7 m, where it is still relatively challenging to obtain femtosecond laser pulses with required high power.…”
Section: Introductionmentioning
confidence: 99%
“…Lithium tantalate (LT), having similarly good optical properties, is a good alternative at shorter (800 nm) pump wavelengths [10], where one has to take care for avoiding the three-photon absorption. Recent results show that semiconductors, such as ZnTe [11] or GaP [12] can be applied for efficient THz generation, too if longer pump wavelengths are used in order to reduce low order multiphoton absorption. For such long wavelength pumping there is significant refractive index difference between the optical and the THz region in these cases as well.…”
Section: Introductionmentioning
confidence: 99%
“…This issue may be alleviated using a superposition of beamlets [31][32][33] and variants thereof [34,35]. Alternatively, attempts to eliminate the drawbacks of tilted pulse fronts in lithium niobate by utilizing smaller pulse-front tilt angles are being pursued [36,37].…”
mentioning
confidence: 99%