Prospects of Semiconductor Terahertz Pulse Sources

Polónyi, Gyula; Mechler, Mátyás; Hebling, J.; Fülöp, J. A.

doi:10.1109/jstqe.2017.2662661

Cited by 22 publications

(15 citation statements)

References 41 publications

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“…The symbols indicate the cut-off wavelengths for MPA of various orders. [85] For example, it can become a key technology for compact THzdriven particle accelerators. Adapted with permission.…”

Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 99%

“…This new THz source, in combination with efficient infrared pump sources in the 1.7 to 2.5 µm wavelength range based, e.g., on Ho-or Cr-based laser technology, [84] opens up new perspectives for THz high-field applications. [85] For example, it can become a key technology for compact THzdriven particle accelerators. [17,23] Certain applications, such as the resonant excitation of materials in (nonlinear) THz spectroscopy or THz-driven electron acceleration in waveguide, resonator, and dielectric grating structures require multicycle THz pulses.…”

Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 99%

See 1 more Smart Citation

Laser‐Driven Strong‐Field Terahertz Sources

Fülöp

Tzortzakis

Kampfrath

2019

Advanced Optical Materials

287

147

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reason for this interest relies on the fact that THz radiation can couple resonantly to numerous fundamental motions of ions, electrons, and electron spins in all phases of matter. For example, in solids, the THz range overlaps with the frequency of lattice vibrations (phonons), the collision rates of conduction electrons, the binding energy of bound electron-hole pairs (excitons), and the precession frequency of spin waves (magnons). Consequently, THz radiation, both continuous-wave and pulsed, has been used for characterization of and gaining insight into elementary processes in complex materials. The majority of these studies used relatively weak THz fields and, thus, probed the linear response of the material, without inducing notable material modifications.Only recently, however, completely new avenues in THz science were opened up by triggering nonlinear THz responses of materials. [3][4][5][6][7][8][9][10][11][12][13] Instead of using weak fields to primarily observe selected THz modes such as phonons or magnons, strong fields allow one to actively drive them to unprecedentedly large amplitudes, potentially thereby resulting in novel states of matter. [6,8,11] For example, simulations suggest that exciting matter with intense THz transients may lead to massive modifications of electrically [14] or magnetically [15] ordered domains and enable the acceleration of free ions to ≈1 MeV, [16] and postacceleration to 50-100 MeV energies. [17] Remarkable experimental results such as switching of magnetic order, [18,19] parametric amplification of optical phonons, [20] novel insights into spin-lattice coupling, [21,22] and acceleration of free electrons in a THz linear accelerator [23] were achieved only recently. This progress has been made possible by the development of laser-driven table-top THz sources routinely providing pulses with unprecedented energies and peak electric and magnetic field strengths throughout the entire THz spectral range. Different laser-based THz pulse generation techniques can be used to access different parts of the spectral range extending from 0.1 to 10 THz. Some of the recently developed technologies enable the generation of radiation with even larger bandwidth or tuning range up to 100 THz and beyond, which lead to an extension of what is called the THz spectral range. An overview of the approximate spectral coverage and the achieved highest pulse energies and peak electric-field strengths of various laserdriven technologies is given in Figure 1. ScopeIn this work, the basic principles of femtosecond-laser-driven intense pulsed THz sources and their recent development are reviewed. These sources are capable of delivering peak electric field strengths on the MV cm −1 scale. Corresponding typical THz pulse energies are on the µJ-to-mJ level, depending on A review on the recent development of intense laser-driven terahertz (THz) sources is provided here. The technologies discussed include various types of sources based on optical rectification (OR), spintronic emitters, and laserfilame...

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Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 99%

Section: Novel Concepts For Infrared Pumpingmentioning

confidence: 99%

Laser‐Driven Strong‐Field Terahertz Sources

Fülöp

Tzortzakis

Kampfrath

2019

Advanced Optical Materials

287

147

View full text Add to dashboard Cite

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“…Novel high-power ultrashort-pulse laser and parametric sources, operating at infrared wavelengths, have recently enabled new application areas in nonlinear optics [1,2]. For example, extremely efficient terahertz (THz) pulse generation has been investigated by optical rectification of infrared pump pulses in semiconductors [3][4][5][6][7][8][9]. THz-pulse-driven high-harmonic generation, recently demonstrated in GaSe semiconductor [10], may enable to explore and exploit electron wavefunctions and the band structure by all-optical methods, and even lead to the construction of intense CEP-stable solid-state attosecond sources.…”

Section: Introductionmentioning

confidence: 99%

“…The knowledge of 4PA and higher-order nonlinearities can be crucial for applications driven by infrared pulses. For example, in the newly developed very promising semiconductor THz generators, 4PA can be a major design issue [9,23]. The efficiency of THz generation in ZnTe could be increased by two orders of magnitude, from 3.1 × 10 −5 [24] to as high as 0.7% [7,8].…”

Section: Introductionmentioning

confidence: 99%

Measurement of four-photon absorption in GaP and ZnTe semiconductors

et al. 2020

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Intensity-dependent effective four-photon absorption (4PA) coefficients in GaP and ZnTe semiconductors were measured by the z-scan method using pump pulses of 1.75 µm wavelength, 135 fs duration, and up to 500 GWcm −2 intensity. A nonlinear pulse propagation model, including linear dispersion and 4PA was used to obtain the 4PA coefficients from measurements. The intensity-dependent effective 4PA coefficients vary from 2.6 × 10 −4 to 65 × 10 −4 cm 5 GW −3 in GaP, and from 3.5 × 10 −4 to 9.1 × 10 −4 cm 5 GW −3 in ZnTe. The anisotropy in 4PA was shown in GaP. The knowledge of 4PA coefficients is important for the design of semiconductor photonics devices.

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“…Attempts to mitigate this problem by using contacting grating [7], stair-step echelons [8,9], and a combination of stair-step echelon with reflecting grating [10] still do not result in THz generation with energies or efficiencies close to the abovementioned values. It is well established [11,12] that the effective interaction length in semiconductor materials such as ZnTe, GaP, and GaAs can be significantly larger due to operation ability at smaller tilt angles < 30 • and lower THz-wave absorption at room temperature. However, to escape 2nd-and 3rd-order multiphoton pump absorption (MPA), these materials have to be pumped at longer wavelengths λ p ≥ 1.7 µm, where it is still relatively challenging to obtain femtosecond laser pulses with the required high power.…”

Section: Introductionmentioning

confidence: 99%

Nearly Single-Cycle Terahertz Pulse Generation in Aperiodically Poled Lithium Niobate

Avetisyan

Tonouchi

2019

Photonics

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In the present work, an opportunity of nearly single-cycle THz pulse generation in aperiodically poled lithium niobate (APPLN) crystal is studied. A radiating antenna model is used to simulate the THz generation from chirped APPLN crystal pumped by a sequence of femtosecond laser pulses with chirped delays (m = 1, 2, 3 . . . ) between adjacent pulses. It is shown that by appropriately choosing ∆t m , it is possible to obtain temporal overlap of all THz pulses generated from positive (or negative) domains. This results in the formation of a nearly single-cycle THz pulse if the chirp rate of domain length δ in the crystal is sufficiently large. In the opposite case, a few cycle THz pulses are generated with the number of the cycles depending on δ. The closed-form expression for the THz pulse form is obtained. The peak THz electric field strength of 0.3 MV/cm is predicted for APPLN crystal pumped by a sequence of laser pulses with peak intensities of the separate pulse in the sequence of about 20 GW/cm 2 . By focusing the THz beam and increasing the pump power, the field strength can reach values in the order of few MV/cm.

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Prospects of Semiconductor Terahertz Pulse Sources

Cited by 22 publications

References 41 publications

Laser‐Driven Strong‐Field Terahertz Sources

Laser‐Driven Strong‐Field Terahertz Sources

Measurement of four-photon absorption in GaP and ZnTe semiconductors

Nearly Single-Cycle Terahertz Pulse Generation in Aperiodically Poled Lithium Niobate

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