Prospects of Tunnel FETs in the Design of Power Management Circuits for Weak Energy Harvesting DC Sources

Cavalheiro, David; Moll, Francesc; Valtchev, Stanimir

doi:10.1109/jeds.2018.2808950

Cited by 7 publications

(2 citation statements)

References 14 publications

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“…Benchmarking based on Si- and III–V-based state-of-the-art TFET devices with data published by various research groups. We have chosen to use data for SS vs I DS per unit width for both n-TFET (denoted by circle with solid line) and p-TFET (denoted by diamond with solid line) devices which have shown SS near or less than thermal limit (60 mV/dec) at room temperature. ,,,− …”

Section: Transition From Mosfets To Energy-efficient Tfet Devicesmentioning

confidence: 99%

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Nazir

Rehman

Park

2020

ACS Appl. Mater. Interfaces

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Conventional field-effect transistors (FETs) have long been considered a fundamental electronic component for a diverse range of devices. However, nanoelectronic circuits based on FETs are not energy efficient because they require a large supply voltage for switching applications. To reduce the supply voltage in standard FETs, which is hampered by the 60 mV/decade limit established by the subthreshold swing (SS), a new class of FETs have been designed, tunnel FETs (TFETs). A TFET utilizes charge-carrier transportation in device channels using quantum mechanical based band-to-band tunneling despite of conventional thermal injection. The TFETs fabricated with thin semiconducting film or nanowires can attain a 100-fold power drop compared to complementary metal−oxide−semiconductor (CMOS) transistors. As a result, the use of TFETs and CMOS technology together could ameliorate integrated circuits for low-power devices. The discovery of two-dimensional (2D) materials with a diverse range of electronic properties has also opened new gateways for condensed matter physics, nanotechnology, and material science, thus potentially improving TFET-based devices in terms of device design and performance. In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices. Lastly, future prospects are presented for the improvement of device design and the working efficiency of TFETs.

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Section: Transition From Mosfets To Energy-efficient Tfet Devicesmentioning

confidence: 99%

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Nazir

Rehman

Park

2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…To achieve this fundamental goal, it must be set in a specific circuit to verify its compatibility with MOSFET technology. At present, research on the circuit design strategy based on TFET devices is gradually conducted, such as the analog and mixed signal circuit [48][49][50], digital logic circuit [50,51], power management circuit design [52]. There are also studies on the design of hybrid circuits based on MOSFETs and TFETs [53].…”

Section: Introductionmentioning

confidence: 99%

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Jin

Wang

et al. 2021

Nanoscale Res Lett

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A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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Recent advances in the design and development of radio frequency-based energy harvester for powering wireless sensors: a review

Selvan

Zaman

Gobbi

et al. 2018

Journal of Electromagnetic Waves and Applications

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Prospects of Tunnel FETs in the Design of Power Management Circuits for Weak Energy Harvesting DC Sources

Cited by 7 publications

References 14 publications

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Recent advances in the design and development of radio frequency-based energy harvester for powering wireless sensors: a review

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