2019
DOI: 10.1021/acsami.9b03742
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Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films

Abstract: Catalytic MoS x thin films have been directly photoelectrodeposited on GaInP2 photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the MoS x deposition conditions were controlled to obtain 8–10 nm films directly on p-GaInP2 substrates without ancillary protective layers. The films were nominally composed of MoS2, with additional MoO x S y and MoO3 species detected and showed no long-range crystalline order. The as-deposited material showed excellent catalytic activity toward the … Show more

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Cited by 19 publications
(23 citation statements)
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“…The MoS2/III-V device lasted over five times longer than the PtRu/III-V device, which is consistent with enhanced durability as observed in previous reports comparing MoS2-and PtRucoated GaInP2 photocathodes. 9,11,12 As seen in the microscope images, both the MoS2/III-V and PtRu/III-V devices had similar failure modes, where macroscopic degradation originated at a single point, likely a material growth or post-growth processing defect. This degraded area then rapidly grew to encompass the whole sample, leading to a sudden loss in current.…”
Section: Main Textmentioning
confidence: 92%
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“…The MoS2/III-V device lasted over five times longer than the PtRu/III-V device, which is consistent with enhanced durability as observed in previous reports comparing MoS2-and PtRucoated GaInP2 photocathodes. 9,11,12 As seen in the microscope images, both the MoS2/III-V and PtRu/III-V devices had similar failure modes, where macroscopic degradation originated at a single point, likely a material growth or post-growth processing defect. This degraded area then rapidly grew to encompass the whole sample, leading to a sudden loss in current.…”
Section: Main Textmentioning
confidence: 92%
“…Molybdenum disulfide nanomaterials have been shown to stabilize a variety of singlejunction Si and III-V PEC systems, functioning as a hydrogen evolution reaction (HER) catalyst and protection layer. [9][10][11][12][13][14][15] Because of the promising performance in single-junction photocathodes, it is of interest to use MoS2 with tandem semiconductor systems to improve the stability during unassisted solar water splitting.…”
Section: Toc Graphicmentioning
confidence: 99%
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“…However, the high densities of surface defect states act as trap states on the surface that accept the charge carriers and recombine with the transferred charge carriers on the surface, degrading the efficiency of the device. So, methods to regulate the densities of surface defects, such as introducing passivation layers, oxygen plasma exposure, hydrogen treatments and annealing are required [9,[55][56][57][58]. In addition, we cover the methods for regulating the type of defects and densities of defects in Section 3 in details.…”
Section: Surface States At the Solid-liquid Interface For Charge Tranmentioning
confidence: 99%
“…Other solutions exploit critical elements such as indium and gallium. 11,12 Silicon and III-V semiconductors exhibit limited stability in aqueous solutions and must be thoroughly passivated after HF etching of native oxide layer. 9,10,[13][14][15] Metal oxides hold promises in that prospect.…”
Section: Introductionmentioning
confidence: 99%