2010
DOI: 10.1007/s11085-010-9209-3
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Protective Properties of Magnetron-Sputtered Cr–Si Layers on CoSb3

Abstract: Pulse magnetron sputtering was used to deposit Cr-5Si (at.%) thin layers onto CoSb 3 substrates to prevent degradation of the material at elevated temperatures. The quality of the protective layers was evaluated on the basis of oxidation tests in air at 500 and 600°C for up to 80 h. The surfaces, fractures and cross-sections of specimens were analyzed to assess integrity and adherence of the deposited layer as well as the extent of reaction and diffusion phenomena at interfaces. It was found that the Cr-5Si la… Show more

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Cited by 22 publications
(9 citation statements)
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“…In order to prevent the diffusion between the skutterudite TE material and the electrode and to release the stress at the joint, an intermediate layer or a barrier layer is usually employed between them. Some attempts [ [224][225][226][227][228][229][230][231][232][233][234][235][236] have been made to join TE materials onto different electrodes (such as Mo-Cu alloys [225,229,236], Ag-Cu [233], Cu [235]) with different barrier layers or intermediate layer (such as Cr-Si alloys [225], Ti-Al alloys [227], Ni [228], Ti [229,230], TiCoSb [231], ZrO 2 /Ti [232], Co [233], Al-Ni [234], Fe-Ni [237]) in recent years. The lower contact resistance, stable interface, and high mechanical properties of the device can be obtained by selecting the appropriate electrode and barrier layers to connect with the CoSb 3 -based material.…”
Section: Cosb 3 -Based Te Devicesmentioning
confidence: 99%
See 1 more Smart Citation
“…In order to prevent the diffusion between the skutterudite TE material and the electrode and to release the stress at the joint, an intermediate layer or a barrier layer is usually employed between them. Some attempts [ [224][225][226][227][228][229][230][231][232][233][234][235][236] have been made to join TE materials onto different electrodes (such as Mo-Cu alloys [225,229,236], Ag-Cu [233], Cu [235]) with different barrier layers or intermediate layer (such as Cr-Si alloys [225], Ti-Al alloys [227], Ni [228], Ti [229,230], TiCoSb [231], ZrO 2 /Ti [232], Co [233], Al-Ni [234], Fe-Ni [237]) in recent years. The lower contact resistance, stable interface, and high mechanical properties of the device can be obtained by selecting the appropriate electrode and barrier layers to connect with the CoSb 3 -based material.…”
Section: Cosb 3 -Based Te Devicesmentioning
confidence: 99%
“…have been widely studied. The output performance and service behavior of CoSb 3 -based TE devices were greatly improved by the design and optimization of electrode, interface and barrier layer, and the protection coating [225,232,234,251,252] for preventing Sb sublimation and oxidation. Table 2 summarizes some available CoSb 3 -based TE devices reported in recent years.…”
Section: Cosb 3 -Based Te Devicesmentioning
confidence: 99%
“…Sakamoto et al adopted a continuous metal foil as a physical barrier which restrained thermal decomposition near the surface of SKD materials . Godlewska et al deposited Cr–5Si thin layers onto CoSb 3 using pulse magnetron sputtering, preventing the degradation of SKDs at high temperatures in air . However, the thin layers lost their protection ability at 600 °C.…”
Section: Development Of Filled‐skutterudite‐based Devices For Power Gmentioning
confidence: 99%
“…Different types of high-temperature protective systems for CoSb 3 -based materials were tested over the years. Several approaches addressed protection against antimony sublimation in an oxygen-free environment [29][30][31][32] and a few against oxidation [33][34][35][36][37]. Glass-based coatings are of interest as protective coatings for both n-and p-type thermoelectrics.…”
Section: Introductionmentioning
confidence: 99%