Proton and Gamma Radiation Effects on a Fully Depleted Pinned Photodiode CMOS Image Sensor

Stefanov, Konstantin D.; Holland, Andrew D.

doi:10.1109/tns.2020.2990081

Cited by 7 publications

(3 citation statements)

References 29 publications

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“…[10][11][12][13] Although CMOS detectors have attracted more and more attention in space astronomy in recent years, e.g., the Lobster Eye Imager for Astronomy (LEIA) 14,15 and Einstein Probe (EP) mission, 16,17 only few irradiation studies have been carried out. 4,[18][19][20][21][22][23] In addition, the techniques of CMOS detectors develop rapidly and have great diversity. Therefore, investigations of the irradiation damage on CMOS detectors are necessary for space applications.…”

Section: Introductionmentioning

confidence: 99%

Radiation effects on scientific complementary metal-oxide-semiconductor detectors for x-ray astronomy: II. Total ionizing dose irradiation

Chen,

Ling,

Liu

et al. 2024

J. Astron. Telesc. Instrum. Syst.

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Complementary metal-oxide-semiconductor (CMOS) detectors are a competitive choice for current and upcoming astronomical missions. To understand the performance variations of CMOS detectors in the space environment, we investigate the total ionizing dose effects on custom-made large-format X-ray CMOS detectors. Three CMOS detector samples were irradiated with a 60 Co source with a total dose of 70 and 105 krad. We test and compare the performance of these detectors before and after irradiation. After irradiation, the dark current increases by roughly 20 ∼ 100 times, and the readout noise increases from 3 e − to 6 e − . The bias level at 50 ms integration time decreases by 13 to 18 digital number (DN) at −30°C. The energy resolution increases from ∼150 to ∼170 eV at 4.5 keV at −30°C. The conversion gain of the detectors varies for <2% after the irradiation. Furthermore, there are about 50 pixels in which bias at 50 ms has changed by more than 20 DN after the exposure to the radiation and about 30 to 140 pixels in which the readout noise has increased by over 20 e − at −30°C at 50 ms integration time. These results demonstrate that the performances of large-format CMOS detectors do not suffer significant degeneration in space environment.

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Section: Introductionmentioning

confidence: 99%

Radiation effects on scientific complementary metal-oxide-semiconductor detectors for x-ray astronomy: II. Total ionizing dose irradiation

Chen,

Ling,

Liu

et al. 2024

J. Astron. Telesc. Instrum. Syst.

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“…However, the influence of proton irradiations on readout noise and energy resolution varies with the investigation conditions, including the temperature, the dose of irradiation, and the proton energy. 17,24,25 Moreover, the analysis on proton damage at the pixel level is still insufficient. Therefore, there are great demands to reveal the degradation of CMOS sensors' performances for future astronomical missions.…”

Section: Introductionmentioning

confidence: 99%

“…For CMOS sensors, in general, an increase in dark current 17 and the appearance of random telegraph signals 20 are observed after being irradiated by protons. However, the influence of proton irradiations on readout noise and energy resolution varies with the investigation conditions, including the temperature, the dose of irradiation, and the proton energy 17 , 24 , 25 . Moreover, the analysis on proton damage at the pixel level is still insufficient.…”

Section: Introductionmentioning

confidence: 99%

Radiation effects on scientific CMOS sensors for X-ray astronomy: I. Proton irradiation

Liu,

Ling,

et al. 2023

J. Astron. Telesc. Instrum. Syst.

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.Complementary metal-oxide-semiconductor (CMOS) sensors are a competitive choice for future X-ray astronomy missions. Typically, CMOS sensors on space astronomical telescopes are exposed to a high dose of irradiation. We investigate the impact of irradiation on the performance of two scientific CMOS (sCMOS) sensors between −30 ° C and 20 ° C at high gain mode (7.5 × ), including the bias map, readout noise, dark current, conversion gain, and energy resolution. The two sensors are irradiated with 50 MeV protons with a total dose of 5.3 × 1010 p · cm − 2. After the exposure, the bias map, readout noise, and conversion gain at various temperatures are not significantly degraded, nor is the energy resolution at −30 ° C. However, after the exposure the dark current has increased by hundreds of times, and for every 20 ° C increase in temperature, the dark current also increases by an order of magnitude. Therefore, at room temperature, the fluctuations of the dark currents dominate the noise and lead to a serious degradation of the energy resolution. Moreover, among the 4 k × 4 k pixels, there are about 100 pixels whose bias at 50 ms has changed by more than 10 DN ( ∼ 18 e − ), and about 10 pixels whose readout noise has increased by over 15 e − at −30 ° C. Fortunately, the influence of the dark current can be reduced by decreasing the integration time, and the degraded pixels can be masked by regular analysis of the dark images. Some future X-ray missions will likely operate at −30 ° C, under which the dark current is too small to significantly affect the X-ray performance. Our investigations show the high tolerance of the sCMOS sensors for proton radiation and prove their suitability for X-ray astronomy applications.

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Ionising radiation effects in a soft X-ray CMOS image sensor

Townsend-Rose,

Buggey,

Ivory

et al. 2024

Nuclear Instruments and Methods in Physics Research Section A:

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Proton and Gamma Radiation Effects on a Fully Depleted Pinned Photodiode CMOS Image Sensor

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Cited by 7 publications

References 29 publications

Radiation effects on scientific complementary metal-oxide-semiconductor detectors for x-ray astronomy: II. Total ionizing dose irradiation

Radiation effects on scientific complementary metal-oxide-semiconductor detectors for x-ray astronomy: II. Total ionizing dose irradiation

Radiation effects on scientific CMOS sensors for X-ray astronomy: I. Proton irradiation

Ionising radiation effects in a soft X-ray CMOS image sensor

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