Proton Beam Modification of Selected AIIIBVCompounds

Ascheron, C.

doi:10.1002/pssa.2211240102

Cited by 21 publications

(1 citation statement)

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“…However, for InGaP material we found only a few reports of irradiation experiments, mostly related to the electrical parameters of the devices [12,13] and few about defects in the material [14,15]. Although for InP and GaP compounds some works show differences between experimental results and simulations regarding the penetration of protons [16], experiments on ion ranges for InGaP have not been reported yet.…”

Section: Introductionmentioning

confidence: 89%

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi

Khachadorian

Suárez

et al. 2016

Journal of Applied Physics

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We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially-resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase of the intensity of LO phonons and a decrease of the luminescence were observed. We associate these changes with the the creation of defects in the damage region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with SRIM simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20 % for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation we propose an increase of 40 % in the electronic stopping power for InGaP.

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Section: Introductionmentioning

confidence: 89%

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi

Khachadorian

Suárez

et al. 2016

Journal of Applied Physics

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Influence of proton implantation on the properties of CuInSe₂ single crystals (I). Ion channeling study of lattice damage

Yakushev

Tomlinson

Neumann³

1994

Cryst. Res. Technol.

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The lattice damage of p-type CuInSe, single crystals implanted with 10 keV protons in the fluence range from 2.5 . to 8 . 1OI5 cm-' was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2 . 1015 cm-' radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature.Die Gitterschadigung p-leitender CuInSe,-Einkristalle, die mit 10 keV -Protonen im Dosisbereich von 2,5 . 1014 bis 8 . lOI5 cm-2 implantiert wurden, ist mit der Methode der Rutherford-Riickstreuung und der Kanalisierungstechnik untersucht worden. Fur Protonendosen bis zu etwa 2 .cm-* wird eine Strahlenausheilung der Defekte beobachtet, was sehr hohen Defektkonzentrationen in den nicht implantierten Proben zugeschrieben wird. Bei hoheren Dosen tritt eine Strahlenschadigung auf, die Konzentration der strahlungsinduzierten Defekte bleibt jedoch klein. Es gibt Hinweise darauf, da13 entweder Selenatome auf Zwischengitterplatzen oder unter Beteiligung von Selenatomen auf Zwischengitterplatzen gebildete Defektkomplexe bei Raumtemperatur stabil sind.

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