Proton, electron and heavy ion single event effects on the HAS2 CMOS Image Sensor

Beaumel, M.; Hervé, Dominique; Aken, D. Van; Pourrouquet, Pierre; Poizat, Marc

doi:10.1109/radecs.2013.6937451

Cited by 3 publications

(2 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For space applications, especially star trackers, the CIS used are generally hardened to SEL [13]. CIS1 and CIS2 were irradiated under bias using a power supply that can control and limit the current to prevent a destructive overcharge.…”

Section: Single Event Latchupmentioning

confidence: 99%

See 1 more Smart Citation

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Virmontois

Toulemont

Rolland

et al. 2014

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

This paper focuses on radiation-induced dose and single event effects in digital CMOS image sensors using pinned photodiodes. Proton irradiations were used to study cumulative effects. As previously observed, the dark current is the main electrical parameter affected by protons. The mean dark current increase appears proportional to Srour's universal damage factor. Therefore, the degradation is mainly attributed to displacement damage in the pinned photodiode. Heavy ion tests are also reported in this work. This study focuses on single event effects in digital CMOS imagers using numerous electronic functions such as column ADCs, a state machine and registers. Single event transients, upsets and latchups are observed and analyzed. The cross sections of these single events are transposed to specific space imaging missions in order to show that the digital functions can fit the mission requirements despite these perturbations. Index Terms-Active pixel sensor (APS), CMOS image sensor (CIS), displacement damage () dose , monolithic active pixel sensor (MAPS), pinned photodiode (PPD), random telegraph signal (RTS), single event effects (SET), total ionizing dose (TID).

show abstract

Section: Single Event Latchupmentioning

confidence: 99%

“…Numerous studies deal with ionizing and non-ionizing dose effects [5]- [10] while only a few discuss single events [12]- [15]. Earlier studies [12] [13] have focused on radiation-tolerant devices using hardening-by-design techniques. More recent ones [14] [15] are dedicated to single event effects in basic pixel array structures.…”

Section: Introductionmentioning

confidence: 99%