Proton energy dependence of the light output in gallium nitride light-emitting diodes

Khanna, Shyam M.; Estan, D.; Erhardt, Lorne; Houdayer, A.; Carlone, C.; Ionascut-Nedelcescu, A.; Messenger, S.; Walters, Robert J.; Summers, G.P.; Warner, J. H.; Jun, I.

doi:10.1109/tns.2004.835097

Cited by 42 publications

(36 citation statements)

References 13 publications

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“…[158][159][160][161][162][163][164][165][166][167][168][169][170][171] Recently, the application of GaN-based LEDs has been extended to satellite communication systems for weather forecasting or broadband data transmission due to their high radiation hardness. The materials used in GaN-based LEDs have small lattice constants (a = 3.189 Å, c = 5.186 Å for wurtzite GaN structure) due to their strong bond energies and therefore show superior resistance to damage under radiation environments due to the higher displacement energies compared with other semiconductor systems such as the GaAs used in red LEDs (a = 5.653 Å).…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…They also observed that the optical properties degraded faster than the electrical properties due to an increase in non-radiative transitions through radiation-induced defect states. Khanna et al 168 reported on the proton energy dependence of light output degradation of AlGaN/InGaN/AlGaN blue LEDs over the energy range of 2-115 MeV.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

View full text Add to dashboard Cite

show abstract

“…The physical mechanism which causes a degradation of the light output in irradiated LEDs is an increase of radiation-induced lattice defects [1]. Thereby non-radiative recombination centers are created which compete with radiative centers for excess carriers.…”

Section: Led Device Mo Deling Analysismentioning

confidence: 99%

“…Photonic systems based on optical fibers, such as optical fiber sensors and data transfer systems, are ideally suited for applications where high bandwidth, immunity from electromagnetic interference, low power consumption, and low weight is recommended [1]. In order to operate such systems in a hostile radiation environment one has to know how the single components behave when they are exposed to ionizing radiation.…”

Section: Introductionmentioning

confidence: 99%

Radiation Damage Effects in Heterostructure Light Emitting Diodes (HLEDs) under Proton Irradiation Fields

Rashed¹

2012

IJISA

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Abstract-In the present paper, we have been analyzed the high temperature variations testing in order to be used to determine light emitting diode lifetime, even though laser diode failure mechanisms are more sensitive to increases in current density. As a measured parameter of degradation, the current density is of great significance when searching for failure modes in a laser diode. Raising the current density however, is not really indicative of lifetime since it is more likely a situation to be avoided than one that simulates normal lifetime degradation. The reliability of semiconductor sources is very dependent on the degradation modes. This paper has investigated some of the degradation modes and capabilities of typical LEDs currently used in many communication and sensing systems over wide range of the affecting parameters. LED's are typically used in multimode transmission systems where data rates no larger than 50 Mbit/sec are required. They have larger spectral widths and can add to the problem of dispersion in communications systems. Laser diodes are used in systems that require coherent and often single mode light such as high data rate communications and sensing applications.

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“…Modulators and optical fibers have previously been irradiated with neutrons within thermal effects [1]. The modulators were unaffected in terms of their reflectance.…”

Section: Introductionmentioning

confidence: 99%

Speed Performance Degradation of Electrooptic Modulator Devices by Neutrons Irradiations at High Temperature Effects

Rashed¹

2012

IJOE

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In the present paper, we have deeply investigated the transmission efficiency degradation of electrooptic modulator devices in thermal irradiated hard environments over wide range of the operating parameters. It is well known that the radiation-induced electrooptic modulator defects can modify the initial doping concentrations, creating generation-recombination centres and introducing trapping of carriers. Additionally, rate of the lattice defects is thermally activated and reduces for increasing irradiation temperature as a result of annealing of the damage. Both the ambient temperature and the irradiation dose possess sever effects on the electro-optical characteristics and consequently the performance characteristics of electroptic modulator devices. As well as we have deeply developed the modelling basics of electrooptic modulator devices, which may be used to analyzed the modulator quantum efficiency, dark current, modulating voltage, modulating frequency, 3-dB bandwidth, transmitted signal bandwidth, modulator quality factor, modulator sensitivity, modulator sensitivity bandwidth product, switching voltage, modulator device performance index, operating switching time and speed response of these irradiated electrooptic modulator devices after different irradiation fluences.

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Proton energy dependence of the light output in gallium nitride light-emitting diodes

Cited by 42 publications

References 13 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Radiation Damage Effects in Heterostructure Light Emitting Diodes (HLEDs) under Proton Irradiation Fields

Speed Performance Degradation of Electrooptic Modulator Devices by Neutrons Irradiations at High Temperature Effects

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