Proton exchange membrane micro fuel cells on 3D porous silicon gas diffusion layers

Kouassi, Sébastien; Gautier, Gaël; Théry, J.; Desplobain, S.; Borella, Mathias; Ventura, L.; Laurent, Jean‐Yves

doi:10.1016/j.jpowsour.2012.05.046

Cited by 23 publications

(5 citation statements)

References 19 publications

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“…Depending on the substrate type and the etching parameters, numerous different pore morphologies can be obtained, resulting in a wide range of applications over the past few decades. Macroporous silicon, in particular with high aspect ratio (AR), has been used in many technical fields, such as microelectromechanical systems (MEMS) devices [1,2], biosensors [3,4], fuel cells [5,6], microelectronics [7] and photonic crystals [8,9]. All these applications require the development of high-quality pore structures with fast etching speed, which is one of the most important factors in effective mass production.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

Wen-bing

et al. 2018

Materials Research Letters

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Etching rate is a major concern for the effective mass production of high-aspect-ratio microstructures, especially in p-type silicon. In this work, controlled electrochemical growth of high-aspect-ratio (from 15 to 110) macropores in p-type silicon at ultrafast etching rate (from 16 to 30 µm min −1 ) has been studied. Based on current-burst-model, pore formation was systematically investigated from the nucleation phase to stable pore growth. Good macropores with depth up to 180 µm and aspect ratio beyond 110 was achieved in just 11 min. This sets a new record on state-of-the-art p-type silicon microfabrication and can promote the development of microdevices. IMPACT STATEMENTHigh-aspect-ratio macropores at ultrahigh etching rate were achieved in p-type silicon, which sets a novel record among p-type silicon microfabrication and can promote the effective mass production of microdevices. ARTICLE HISTORY

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Section: Introductionmentioning

confidence: 99%

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

Wen-bing

et al. 2018

Materials Research Letters

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“…Then, the continuing studies paved the way for advanced surface chemistry (Coffinier and Boukherroub, 2016), biocompatibility (Canham, 1995), bio-sensors (Lin et al, 1997), biomedical therapy (Santos, 2014), quasiballistic electron emission (Koshida et al, 1999), thermal isolation (Nassiopoulou and Kaltsas, 2000; Nassiopoulou, 2014), and thermoacoustics (Shinoda et al, 1999). Recently the studies are further expanded to the field of energetics (Kouassi et al, 2012). Tunable optical, electrical, structural, surface, thermal, and chemical properties of PS meet the above-mentioned situation that silicon technology is rapidly evolving in a multilateral manner.…”

Section: Diversifying Studies Of Porous Siliconmentioning

confidence: 99%

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Koshida

Nakamura

2019

Front. Chem.

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Recent topics of application studies on porous silicon (PS) are reviewed here with a focus on the emissive properties of visible light, quasiballistic hot electrons, and acoustic wave. By exposing PS in solvents to pulse laser, size-controlled nc-Si dot colloids can be formed through fragmentation of the PS layer with a considerably higher yield than the conventional techniques such as laser ablation of bulk silicon and sol-gel precursor process. Fabricated colloidal samples show strong visible photoluminescence (~40% in quantum efficiency in the red band). This provides an energy- and cost-effective route for production of nc-Si quantum dots. A multiple-tunneling transport mode through nc-Si dot chain induces efficient quasiballistic hot electron emission from an nc-Si diode. Both the efficiency and the output electron energy dispersion are remarkably improved by using monolayer graphene as a surface electrode. Being a relatively low operating voltage device compatible with silicon planar fabrication process, the emitter is applicable to mask-less parallel lithography under an active matrix drive. It has been demonstrated that the integrated 100 × 100 emitter array is useful for multibeam lithography and that the selected emission pattern is delineated with little distortion. Highly reducing activity of emitted electrons is applicable to liquid-phase thin film deposition of metals (Cu) and semiconductors (Si, Ge, and SiGe). Due to an extremely low thermal conductivity and volumetric heat capacity of nc-Si layer, on the other hand, thermo-acoustic conversion is enhanced to a practical level. A temperature fluctuation produced at the surface of nc-Si layer is quickly transferred into air, and then an acoustic wave is emitted without any mechanical vibrations. The non-resonant and broad-band emissivity with low harmonic distortions makes it possible to use the emitter for generating audible sound under a full digital drive and reproducing complicated ultrasonic communication calls between mice.

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“…These energy sources have been characterized and a maximum power density of 250 mW/cm² was measured showing that electrochemical etching is as competitive as Reactive Ion Etching in this domain (23). The ability to produce porous silicon on non-planar surfaces allows also the achievement of 3D structures in order to increase the active surface of the resulting microfuel cell (24).…”

Section: Energy Micro-sourcesmentioning

confidence: 99%

Porous Silicon in Microelectronics: From Academic Studies to Industry

Gautier

Defforge

Desplobain³

et al. 2015

ECS Trans.

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The evolution of porous silicon (PSi) from its early studies in the late 70’s toward its industrial application in microelectronics is described in this article. The way this material can be integrated now in many devices at a wafer level is shown in this paper through examples of prototypes that include PSi in their fabrication process. For instance, realization of devices on large area wafers in the field of RF passive components, energy micro-sources or porous flexible membranes are described. In this paper, we also show recent advances in the field of PSi etching and integration at an industrial level. In particular, we put an emphasis on reproducibility and homogeneity issues, on the wafer warp management using different annealing procedures.

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Proton exchange membrane micro fuel cells on 3D porous silicon gas diffusion layers

Cited by 23 publications

References 19 publications

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Porous Silicon in Microelectronics: From Academic Studies to Industry

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