Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs

Chen, Jin; Puzyrev, Yevgeniy; Zhang, Cher Xuan; Zhang, En Xia; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Pantelides, Sokrates T.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

doi:10.1109/tns.2013.2281771

Cited by 100 publications

(46 citation statements)

References 24 publications

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“…But for the -rich devices, the peak transconductance increases by a small amount for V, and decreases for higher values of . These differences in the voltage dependences of the transconductance degradation between Ga-rich and -rich devices suggest different densities and energy distributions of defects in irradiated Ga-rich and -rich devices, consistent with previous low-frequency noise studies [5], [7], [15]. The variations that are illustrated in Figs.…”

Section: A DC Resultssupporting

confidence: 90%

“…function of defect energy [7]. But for the -rich devices, the peak transconductance increases by a small amount for V, and decreases for higher values of .…”

Section: A DC Resultsmentioning

confidence: 96%

“…Before and after irradiation, the drive currents of the -rich devices are larger than those of the Ga-rich devices. Proton irradiation creates deep acceptor-like traps, causing the pinch-off voltage to shift positively and on-state currents to drop [7]. Trapped electrons shift the pinch-off voltage and deplete the two-dimensional electron gas, thereby limiting the current [14].…”

Section: A DC Resultsmentioning

confidence: 99%

“…The effects of proton irradiation on the DC and low-frequency ( ) noise characteristics of AlGaN/GaN devices have been studied previously [2]- [7]. To date, there has only been limited work comparing RF and DC characteristics of AlGaN/GaN HEMTs after proton irradiation [3] [6].…”

Section: Introductionmentioning

confidence: 99%

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Chen

Zhang

et al. 2014

IEEE Trans. Nucl. Sci.

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AlGaN/GaN high electron mobility transistors (HEMTs) irradiated with 1.8-MeV protons show more relative degradation in RF power/current gain, cutoff frequency , and maximum oscillation frequency than DC transconductance. These result from radiation-induced increases in fast bulk and surface trap densities, as well as increasing impedance mismatch at high frequencies with increasing proton fluence.-rich MBE devices show less degradation in DC transconductance, but more degradation in RF gain than Ga-rich devices.

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Section: A DC Resultssupporting

confidence: 90%

“…function of defect energy [7]. But for the -rich devices, the peak transconductance increases by a small amount for V, and decreases for higher values of .…”

Section: A DC Resultsmentioning

confidence: 96%

Section: A DC Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Chen

Zhang

et al. 2014

IEEE Trans. Nucl. Sci.

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“…In Ga-rich molecular beam epitaxy (MBE)-grown material, Chen et al [26] found smaller positive threshold voltage shifts after similar proton fluences and attributed the shift due to a ~0.2 eV defect likely associated with N vacancies [6], [26]- [28]. This indicates multiple irradiation-based degradation mechanisms possibly exist and the dominant pathway depends on the growth, processing or other factors.…”

Section: Experimental Methodsmentioning

confidence: 99%

Proton irradiation-induced traps causing V<inf>T</inf> instabilities and RF degradation in GaN HEMTs

Sasikumar

Zhang

Kumar

et al. 2015

2015 IEEE International Reliability Physics Symposium

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Using quantitative high-electron-mobility-transistors (HEMTs)-based defect spectroscopy, the degradation mechanisms of GaN HEMTs subjected to proton irradiation were explored to understand how these devices would operate in high radiation applications. It was observed that proton irradiation in GaN HEMTs caused a permanent threshold voltage (V T ) shift (0.59 V) that led to a 30% reduction in I DS,max due to deep traps formed near the valence band edge, and V T dispersion (i.e., timeand voltage-dependent V T instability) increased by ~0.10 V as a result of an E C 0.72 eV trap that is most likely located in the GaN buffer layer. While RF accelerated life testing with no irradiation exposure in previous work resulted primarily in E C 0.57 eV GaN buffer defect formation/activation localized in the drain access region, the proton irradiation in this work causes degradation through V T shifts mostly through trapping effects under the gate. These results indicate that degradation mechanisms depend strongly on the stressors, and that different defects can cause multiple pathways for HEMT degradation.

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Neural‐Network Potential Simulation of Defect Formation Induced by Knock‐On Irradiation Damage in GaN

Song

Jiang

et al. 2023

Adv Elect Materials

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Understanding the irradiation damage mechanisms of GaN is of great importance for improving irradiation resistance and the ion implantation processes of GaN‐based devices. The understanding of the damage mechanisms, which are normally simulated using molecular dynamics (MD), is bottlenecked by the dilemma that ab initio MD is limited by relatively high computational cost, whereas classical MD suffers from low accuracy. In this paper, a global neural network (G‐NN) potential is constructed for GaN using random stochastic surface walking global optimization combined with global neural network potential (SSW‐NN). By benchmarking the properties of intrinsic defects and defect‐pairs, as well as the threshold displacement energies along different crystallographic directions, this potential is found to provide accuracy similar to ab initio calculations. Furthermore, based on the large‐scale simulations of the knock‐on process, Ga and N vacancies, as well as N interstitials are found to be the major generated defects, whereas only Ga vacancies are predicted in the previous device simulation studies that have been widely recognized. This potential provides an efficient and accurate tool to gain a fundamental understanding of the irradiation damage mechanisms of GaN and refine the parameters in the related device simulations.

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Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs

Cited by 100 publications

References 24 publications

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Proton irradiation-induced traps causing V<inf>T</inf> instabilities and RF degradation in GaN HEMTs

Neural‐Network Potential Simulation of Defect Formation Induced by Knock‐On Irradiation Damage in GaN

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