Proton Irradiated Cz-Si by the Coincidence Doppler Broadening Positron Annihilation Spectroscopy

Abstract

볼륨 결함 측정에도 이용되고 있으며 물질의 전자 [7,8,9] Trans. 2, 1627 (1971).[5] H. E. Collins, Met. Trans. 5, 189 (1974).[6] Chunqing He, M. Muramatsua, T. Ohdairaa, N. (Received July 19, 2011, Revised August 16, 2011, Accepted August 17, 2011 It is described that the proton beam induces micro defects and electronic deep levels in Cz single crystal silicon. Enhance signal-to-noise ratio, Coincidence Doppler Broadening Positron Annihilation Spectroscopy has been applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 4.0 MeV proton beams ranging from 0 to 10 ∼ 14 ptls. The S-parameter values were increased as increasing the irradiated proton beam, that indicated the defects generate more.