2024
DOI: 10.3390/mi15091091
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Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Zixin Zhen,
Chun Feng,
Hongling Xiao
et al.

Abstract: A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper. Combining the higher displacement threshold energy of Al2O3 with the better surface passivation of the SiNx layer, the bilayer dielectrics MIS-HEMT presents much smaller degradation of structural materials and of device electrical performance after proton irradiation. Firstl… Show more

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