Proton radiation damage experiment for X-ray SOI pixel detectors

Yarita, Keigo; Kohmura, Takayoshi; Hagino, Kouichi; Kogiso, Taku; Oono, Kenji; Negishi, Kousuke; Tamasawa, Koki; Sasaki, Akinori; Yoshiki, Satoshi; Tsuru, Takeshi Go; Tanaka, Takaaki; Matsumura, Hideaki; Tachibana, Katsuhiro; Hayashi, Hideki; Harada, Sodai; Takeda, Ayaki; Mori, Koji; Nishioka, Yusuke; Takebayashi, Nobuaki; Yokoyama, Shoma; Fukuda, Kohei; Arai, Y.; Miyoshi, T.; Kurachi, Ikuo; Hamano, Tsuyoshi

doi:10.1016/j.nima.2018.09.057

Cited by 11 publications

(9 citation statements)

References 11 publications

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“…The energy of the incident proton beam is 6 MeV at the beam line. Although the spectrum of the geomagnetically-trapped protons in the FORCE orbit is a continuous spectrum peaked at ∼ 100 MeV, the energy deposit on the Si sensor is dominated by 4-20 MeV protons [15]. Therefore, 6 MeV is a good approximation of the radiation environment in the orbit.…”

Section: Methodsmentioning

confidence: 99%

“…In the orbit of the FORCE satellite (altitude of ∼ 500 km and orbital inclination of ∼ 30 • ), the onboard sensors experience radiation damage mainly due to the cosmic-ray protons geomagnetically trapped at South Atlantic Anomaly. The dose rate of the trapped protons on the XRPIX is approximately ∼ 0.1 krad/year [15]. As X-ray astronomical satellites operate for a few to ∼ 10 years in orbit, the total dose during the mission lifetime is less than a few krad.…”

Section: Radiation Hardness Required For Forcementioning

confidence: 99%

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Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

Hagino,

Yarita,

Negishi

et al. 2020

Preprint

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The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ∼ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X-ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 ± 2%, and the chip output gain decreases by 0.35 ± 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.

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Section: Methodsmentioning

confidence: 99%

Section: Radiation Hardness Required For Forcementioning

confidence: 99%

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

Hagino,

Yarita,

Negishi

et al. 2020

Preprint

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“…Whereas for the destructive effect, it will destruct the microprocessor program and make the execution of the wrong command of the program. These effects are stochastic, as they happened because of the hit of single high energetic particles with specific circuit nodes [19]. In the case of a satellite, it changes the state of memory that makes the satellite cannot remember how it should work [8], [20].…”

Section: Introductionmentioning

confidence: 99%

Intelligent read-out circuit for space radiation detection

Aziz

Toha

Hanifah

et al. 2021

IJEECS

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<span lang="EN-MY">In the design of the satellite system, space radiation is among the important factors that need to be taken care of as it may contribute to system failure. This research aims to design and implement an intelligent read-out circuit to detect the level of radiation. It has the capability to measure the level of radiation. The capability of the designed device to measure the level of radiation and also the type of radiation exposure are the key components to be considered in the design of the system. In this research, the intelligent read-out circuit has been successfully designed and tested to detect the level of radiation. The results show the capability of the system to measure the level of radiation and determine the status of radiation level using both visual and sound indicators. The designed system is able to determine the level of radiation in a short time and strengthen by the danger-alert mechanism present in the system</span><span lang="EN-US">.</span>

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“…Among them, DDD and TID effects are known to degrade the spectral performance of X-ray sensors. [8][9][10][11][12] For example, in X-ray charge-coupled devices (CCDs), the lattice defects caused by the DDD effect result in the loss of some of the charges during transfer, which consequently degrades the energy resolution. In fact, in-orbit proton bombardment gradually deteriorated the energy resolution of X-ray CCDs onboard the Suzaku satellite.…”

Section: Introductionmentioning

confidence: 99%

“…SOI pixel sensors are known to be sensitive to the TID effect, 9,14 which is caused by the oxidetrapped charges and interface traps generated by radiation. These accumulated charges and traps change the operating characteristics of the CMOS circuits and increase the dark current from the Si-SiO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Hayashida,

Hagino,

Kohmura

et al. 2021

Preprint

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X-ray silicon-on-insulator (SOI) pixel sensors, "XRPIX," are being developed for the next-generation Xray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anticoincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the National Institute of Radiological Sciences. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 ± 3%, yielding an energy resolution of 260.1 ± 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.

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Proton radiation damage experiment for X-ray SOI pixel detectors

Cited by 11 publications

References 11 publications

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

Intelligent read-out circuit for space radiation detection

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

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