Proximity effect at superconducting Sn-Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Se<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>interface

Yang, Fan; Ding, Yongjian; Qu, Fanming; Shen, Jie; Chen, Jun; Wei, Zigen; Ji, Zhongqing; Liu, Guangtong; Fan, Jie; Yang, Changli; Xiang, Tao; Lü, Li

doi:10.1103/physrevb.85.104508

Cited by 75 publications

(97 citation statements)

References 38 publications

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“…6) It is useful to note that such a proximity-induced superconducting state on the surface of a TI has singlet Cooper pairs, but nonetheless it is topologically nontrivial due to the Berry phase born by the surface Dirac electrons; therefore, such a surface can be considered a 2D topological superconductor. There have been a number of experimental reports to confirm the superconducting proximity effect in the topological surface states, 171,231,[260][261][262][263][264][265][266][267][268] but the existence of Majorana fermions has not been elucidated.…”

Section: Majorana Fermionsmentioning

confidence: 99%

Topological Insulator Materials

2013

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Topological insulators represent a new quantum state of matter which is characterized by peculiar edge or surface states that show up due to a topological character of the bulk wave functions. This review presents a pedagogical account on topological insulator materials with an emphasis on basic theory and materials properties. After presenting a historical perspective and basic theories of topological insulators, it discusses all the topological insulator materials discovered as of May 2013, with some illustrative descriptions of the developments in materials discoveries in which the author was involved. A summary is given for possible ways to confirm the topological nature in a candidate material. Various synthesis techniques as well as the defect chemistry that are important for realizing bulk-insulating samples are discussed. Characteristic properties of topological insulators are discussed with an emphasis on transport properties. In particular, the Dirac fermion physics and the resulting peculiar quantum oscillation patterns are discussed in detail. It is emphasized that proper analyses of quantum oscillations make it possible to unambiguously identify surface Dirac fermions through transport measurements. The prospects of topological insulator materials for elucidating novel quantum phenomena that await discovery conclude the review.

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Section: Majorana Fermionsmentioning

confidence: 99%

Topological Insulator Materials

2013

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“…This proximity effect has been proposed as a powerful resource for practical applications in optoelectronics 3 and has been predicted to produce the elusive Majorana fermion 4 by combining a superconductor with a topological insulator (TI) [5][6][7][8][9][10] . These goals have been pursued actively, including the recent demonstrations of novel semiconductor light sources 11 and induced superconductivity in TIs [12][13][14][15][16] such as Bi 2 Se 3 and Bi 2 Te 3 , which have been shown to have topologically protected surface states [17][18][19] . Nonetheless, all such experiments performed to date have employed low critical-temperature (low-T c ) materials that require extreme cooling, and the important ratio of the superconducting gap to the Fermi energy in such systems is very small.…”

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confidence: 99%

Proximity-induced high-temperature superconductivity in the topological insulators Bi2Se3 and Bi2Te3

et al. 2012

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Interest in the superconducting proximity effect has been reinvigorated recently by novel optoelectronic applications as well as by the possible emergence of the elusive majorana fermion at the interface between topological insulators and superconductors. Here we produce high-temperature superconductivity in Bi 2 se 3 and Bi 2 Te 3 via proximity to Bi 2 sr 2 CaCu 2 o 8 + δ , to access higher temperature and energy scales for this phenomenon. This was achieved by a new mechanical bonding technique that we developed, enabling the fabrication of highquality junctions between materials, unobtainable by conventional approaches. We observe proximity-induced superconductivity in Bi 2 se 3 and Bi 2 Te 3 persisting up to at least 80 K-a temperature an order of magnitude higher than any previous observations. moreover, the induced superconducting gap in our devices reaches values of 10 mV, significantly enhancing the relevant energy scales. our results open new directions for fundamental studies in condensed matter physics and enable a wide range of applications in spintronics and quantum computing.

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“…Recently, however, bulk superconducting PbTaSe 2 with T c of 3.8 K was found to have zero energy states at vortices which is a hallmark of TOS [7]. An alternative way for realizing TOS is by inducing superconductivity in a topological insulator or in semiconductor-nanowires with strong spin-orbit interaction via the proximity effect (PE) [8][9][10][11]. Unconventional superconductivity in these systems, such as revealed by the presence of zero bias conductance peaks (ZBCP), indicates zero energy bound states that might be due to Majorana zero energy modes, but could also originate in zero energy Andreev bound states in an unconventional superconductor.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance, Gating and Proximity Effects in Ultrathin NbN-Bi2Se3 Bilayers

Koren

2017

Condensed Matter

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Ultrathin Bi 2 Se 3 -NbN bilayers comprise a simple proximity system of a topological insulator and an s-wave superconductor for studying gating effects on topological superconductors. Here we report on 3 nm thick NbN layers of weakly connected superconducting islands, overlayed with 10 nm thick Bi 2 Se 3 film which facilitates enhanced proximity coupling between them. Resistance versus temperature of the most resistive bilayers shows insulating behavior but with signs of superconductivity. We measured the magnetoresistance (MR) of these bilayers versus temperature with and without a magnetic field H normal to the wafer (MR = [R(H) − R(0)]/{[R(H) + R(0)]/2}), and under three electric gate-fields of 0 and ±2 MV/cm. The MR results showed a complex set of gate sensitive peaks which extended up to about 30 K. The results are discussed in terms of vortex physics, and the origin of the different MR peaks is identified and attributed to flux-flow MR in the isolated NbN islands and the different proximity regions in the Bi 2 Se 3 cap-layer. The dominant MR peak was found to be consistent with enhanced proximity induced superconductivity in the topological edge currents regions. The high temperature MR data suggest a possible pseudogap phase or a highly extended fluctuation regime.

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Proximity effect at superconducting Sn-Bi2Se3interface

Cited by 75 publications

References 38 publications

Topological Insulator Materials

Topological Insulator Materials

Proximity-induced high-temperature superconductivity in the topological insulators Bi2Se3 and Bi2Te3

Magnetoresistance, Gating and Proximity Effects in Ultrathin NbN-Bi2Se3 Bilayers

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