Proximity Effects Induced in Graphene by Magnetic Insulators: First-Principles Calculations on Spin Filtering and Exchange-Splitting Gaps

Yang, Hongxin; Hallal, Ali; Terrade, Damien; Waintal, Xavier; Roche, Stephan; Chshiev, M.

doi:10.1103/physrevlett.110.046603

Cited by 326 publications

(310 citation statements)

References 54 publications

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“…Previous theoretical reports estimated an interatomic distance of 2.5 -3 Å for generating a significant wave function overlap and exchange effect in graphene. 3,4 In order to accurately determine the interatomic distance at the interface, more advanced techniques, such as the synchrotron-based combined X-ray linear and circular dichroism, are required. However, our current characterizations have confirmed clean interface between graphene and EuS with smoothness within the range of exchange coupling.…”

Section: S12 Crystal Structure and Interface Properties Of Graphene/eusmentioning

confidence: 99%

“…As shown in Fig. 4e 3,29 For industrial applications in low-power information processing, development of high quality magnetic insulators that are compatible with 2D materials and magnetic above room temperature will be highly desirable.…”

mentioning

confidence: 99%

“…Thus our approach enables other emerging phenomena, for example the quantum anomalous Hall effect in 2D materials by engineering magnetic insulators with inherently both MEF and spin-orbit-coupling, 27,28 or magnetically gated information 8 storage/processing devices with strong spin-orbit-coupling in 2D transition metal dichalcogenides using MEF. 3,29 For industrial applications in low-power information processing, development of high quality magnetic insulators that are compatible with 2D materials and magnetic above room temperature will be highly desirable. …”

mentioning

confidence: 99%

“…[1][2][3] The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. 4 Magnetic exchange field in magnetic multilayers can potentially reach tens or even hundreds of Tesla.…”

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confidence: 99%

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Strong interfacial exchange field in the graphene/EuS heterostructure

Peng¹,

Lee²,

Lemaître³

et al. 2016

Nature Mater

353

336

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Magnetic exchange field in magnetic multilayers can potentially reach tens or even hundreds of Tesla. 6 The single-atomic-layer (2D) materials, such as graphene, mono-layer WS 2 etc., is expected to experience the strongest MEF in heterostructures with magnetic insulators due to the short-range nature of magnetic exchange coupling. 4 2D material/magnetic insulator heterostructures enable local spin modulation by magnetic gates, 4,5,7 and the realization of efficient spin generation for spintronic applications. 8,9 As a proof of concept, here we demonstrate substantial MEF and spin polarization in CVD graphene/EuS heterostructures. We have chosen EuS as a model magnetic insulator because of its wide band-gap (1.65 eV), large exchange coupling J~10 meV, and large magnetic moment per Eu ion ௭~7 , 10 yielding large estimated exchange splitting ௭ in graphene. 4,5 EuS has also been shown to spin-polarize quasiparticles in materials including superconductors and topological insulators. 6,11 The strength of the MEF depends critically on the interface and EuS quality, 12,13 which we optimize with an in-situ cleaning and synthesis process (Methods and Fig. 1a). In contrast to other means, such as defect-or adatom-induced spin polarization, 14,15 depositing insulating EuS well preserves graphene's chemical bonding, confirmed by Raman spectroscopy (Fig. 1b) (Fig. S5-1), indicative of high graphene quality and well-preserved Dirac band structure.We utilize Zeeman spin-Hall effect (ZSHE) to probe the MEF in graphene which splits the Dirac cone via Zeeman effect and generates electron-and hole-like carriers with opposite 4 spins near the Dirac point ( Fig. 2a right panel). 8,9 Under a Lorentz force, these electrons and holes propagate in opposite directions, giving rise to a pure spin current and non-local voltage ( Fig. 2a left panel). We measure the non-local resistance of ZSHE using the device configuration in Fig. 2a where ௫ is the MEF. We further define the parameter :where ௭ denotes the Zeeman energy at the reference field . Given , deriving of graphene/AlO x is straightforward because ௭ is solely determined by . The inset of Fig. 3(b) shows the calculated using T, a proper reference field as we will explain below.To derive of graphene/EuS, we note that according to the theory of ZSHE, 9,17 depends on sample mobility, while other sample-dependents terms (including spin relaxation length, density of thermally activated carriers and Fermi velocity) cancel out (see S3 in SI). The mobility difference between our graphene/EuS and graphene/AlO x samples is~25% (see S1 in SI), which would only yield a~10% correction to  (see S3 in SI). Since~10% difference is 6 small, for an order-of-magnitude estimate of the MEF, we adopt the value of graphene/AlO x for graphene/EuS as an approximation. We then evaluate E Z in graphene/EuS usingTo obtain the lower bound of , we approximate , ignoring the ௫contribution. This constrains us to use a small such that ௫ is small. Meanwhile, should be high enough to ensure that , is much large...

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Section: S12 Crystal Structure and Interface Properties Of Graphene/eusmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Strong interfacial exchange field in the graphene/EuS heterostructure

Peng¹,

Lee²,

Lemaître³

et al. 2016

Nature Mater

353

336

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“…Recently, transport experiments of graphene on a magnetic insulator yttrium iron garnet (YIG) substrate have been reported [30,31] that show an induced proximity exchange splitting of ∼ 0.1 T in the graphene electronic structure [31]. Much larger exchange splittings have been predicted for graphene on EuO [32] and observed for graphene| EuS [33]. Spin pumping into two-dimensional (2D) systems by an electrically insulating magnetic gate may efficiently emulate the spin pumping and maser action predicted to occur by inhomogeneous Zeeman fields [34,35].…”

Section: Introductionmentioning

confidence: 97%

Spin pumping into two-dimensional electron systems

2016

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Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

Shin,

Kim,

Hong

et al. 2023

Adv Funct Materials

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Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next‐generation quantum devices. However, the spin‐symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate‐tunable spin filters. It is demonstrated that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin‐exchange splitting. The large and adjustable spin‐exchange splitting of 155.9 – 306.5 meV is obtained by the characteristic shifts in both the spin‐symmetry‐broken quantum Hall states and the Shubnikov–de Haas oscillations. Strong hybridization‐induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically‐tunable spin polarization in hybrid heterostructures.

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Proximity Effects Induced in Graphene by Magnetic Insulators: First-Principles Calculations on Spin Filtering and Exchange-Splitting Gaps

Cited by 326 publications

References 54 publications

Strong interfacial exchange field in the graphene/EuS heterostructure

Strong interfacial exchange field in the graphene/EuS heterostructure

Spin pumping into two-dimensional electron systems

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

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