2024
DOI: 10.1002/aelm.202400338
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Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide

Vaishali Vardhan,
Subhajit Biswas,
Sayantan Ghosh
et al.

Abstract: Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si‐JNTs) is demonstrated using gaseous nitrogen dioxide (NO2). This involves a dual reaction in both p‐ and n‐type conduction, resulting in a significant decrease in the current in n‐conduction mode and an increase in the p‐conduct… Show more

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