2023
DOI: 10.1016/j.jelechem.2023.117527
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Pseudocapacitive charge storage behavior of cation-doped WS2 nanosheets electrode

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Cited by 9 publications
(4 citation statements)
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“…The close match of the ionic radius of the dopant atom Ru with the cation W atom allows facile substitution of Ru at the atomic site of the host W atom in the crystal lattice. 29…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The close match of the ionic radius of the dopant atom Ru with the cation W atom allows facile substitution of Ru at the atomic site of the host W atom in the crystal lattice. 29…”
Section: Resultsmentioning
confidence: 99%
“…Chemical doping enhances the in-plane electrical conductivity and electrochemical performance of 2D TMD semiconductor materials. 27–29 Apart from this, the process also induces a structural phase transition and enables the functional use of these materials. 30–33 The present research in 2D semiconductor materials focuses on improving the functional properties and thereby expanding the scope of multifunctional use of a single material.…”
Section: Introductionmentioning
confidence: 99%
“…Pristine and Ir-doped WS 2 nanosheets were synthesized using a chemical method by firing the mixture of W, S, and Ir sources. 47,48 In a typical procedure, the precursors tungstic acid (H 2 WO 4 ) and thiourea (CH 4 N 2 S) with a molar ratio of 1 : 48 were ground for 1 hour under ambient conditions. The mixture was collected in an alumina boat and heated at 600 °C for 3 hours under a N 2 (99.999% purity) atmosphere in a tubular furnace to get pristine WS 2 nanosheets.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Doping TMDs with metals such as Cu, Ni, Co, Fe, Pt, Mn, Ru, Gd, etc. enhance the electrical conductivity and activate the basal planes of TMDs, leading to improved performance of supercapacitors. For instance, Prakash et al prepared vertically aligned Ni-doped MoS 2 with enhanced interlayer spacing by a simple hydrothermal technique . The produced supercapacitor electrode with 6% Ni-doping in MoS 2 functioned exceptionally well with a high specific capacitance of 528 F g –1 at a current density of 1 Ag –1 , and a capacity retention up to 85% after 10 000 cycles.…”
Section: Engineered 2d Tmds For Electrochemical Ecsmentioning
confidence: 99%