2016
DOI: 10.1103/physrevlett.117.046402
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Pseudogaps and Emergence of Coherence in Two-Dimensional Electron Liquids inSrTiO3

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Cited by 12 publications
(18 citation statements)
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“…A 2 nm (4 nm) STO quantum well is composed of 5 SrO (10 SrO) planes alternating with 6 (11) planes of TiO 2 , and all quantum well thicknesses are hereafter referenced by their number of SrO planes. Previous tunneling spectra show that in a 5 SrO quantum well a pseudogap opens at~20 K, while a 10 SrO well does not display a gap opening above 2 K. 22 Excellent sample quality consistent with previous reports, [23][24][25] including uniform layer thicknesses and sharp interfaces, was verified by measuring a reference 5 SrO quantum well heterostructure embedded between thick SmTiO 3 spacer layers via x-ray reflectometry measurements (Fig. 1a).…”
Section: Resultssupporting
confidence: 84%
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“…A 2 nm (4 nm) STO quantum well is composed of 5 SrO (10 SrO) planes alternating with 6 (11) planes of TiO 2 , and all quantum well thicknesses are hereafter referenced by their number of SrO planes. Previous tunneling spectra show that in a 5 SrO quantum well a pseudogap opens at~20 K, while a 10 SrO well does not display a gap opening above 2 K. 22 Excellent sample quality consistent with previous reports, [23][24][25] including uniform layer thicknesses and sharp interfaces, was verified by measuring a reference 5 SrO quantum well heterostructure embedded between thick SmTiO 3 spacer layers via x-ray reflectometry measurements (Fig. 1a).…”
Section: Resultssupporting
confidence: 84%
“…Our data demonstrate the onset of quasistatic antiferromagnetic correlations coincident with the T * state inside the SrTiO 3 quantum wells and suggest that incipient antiferromagnetic order drives the formation of the pseudogap state in this oxide heterostructure. 22 More broadly, our results suggest that high density quantum wells driven towards a metal-insulator transition emulate the essential physics underlying bulk antiferromagnetic Mott states as they are destabilized via carrier substitution.…”
Section: Introductionmentioning
confidence: 62%
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“…Further investigations hint towards competing AFM-FM fluctuations in the Mott-critical zone as a possible cause for NFL behavior (Lechermann 2017b). A pseudogap(-like) structure in the theoretical spectral function subject to such fluctuations has indeed been identified in experimental studies (Marshall et al 2016). In an extension of this study, it was shown that the addition of further SrO layers establishes an extra band-insulating regime in the formed SrTiO 3 -like region, with a stronger inplane xy-polarized metallic layer at the boundary (Lechermann 2017a).…”
Section: Mott-band Insulator Architecturesmentioning
confidence: 74%