Pseudohalide‐Induced 2D (CH3NH3)2PbI2(SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Cheng, Xue‐Feng; Hou, Xianghui; Zhou, Jin; Gao, Bi-Jun; He, Jinghui; Li, Hua; Xu, Qingfeng; Li, Najun; Chen, Dongyun; Lu, Jianmei

doi:10.1002/smll.201703667

Cited by 98 publications

(52 citation statements)

References 88 publications

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“…For each device area, the I LRS and I HRS were measured on six devices in the same batch. As shown in Figure a, both average values of I LRS and I HRS do not change obviously with an increasing device area, clearly opposite to the interface‐based switching mechanism, where the current or resistance is dependent on the device area due to the interface modulation . Therefore, we attributed the creation and annihilation of CF as the main mechanism contributing to the RS operations in this work.…”

mentioning

confidence: 73%

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Zou

2019

Physica Rapid Research Ltrs

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Recently, metal halide perovskites have been widely used and considered as an alternative to oxides or chalcogenides in memory devices due to the high on–off ratio and low operating voltage, as well as ease of fabrication. However, most of the perovskite thin films in previous studies have been deposited by lab‐scale solution‐processed methods. They are not directly applicable to larger‐scale and volume manufacturing, hindering the commercialization of this technology. Herein, the performance of memory devices based on vacuum‐deposited inorganic perovskite (VDIP) is investigated for the first time. The optimized VDIP‐based memory devices exhibit reliable and reproducible resistive switching (RS) behaviors with a high on–off ratio (>100), low set/reset voltage (<2 V), and reversible RS by fast pulse‐voltage operations. Furthermore, the devices show an excellent ambient stability, and no obvious degradation is observed after storage in an ambient condition for 30 days. The memory devices on flexible substrates also show a good mechanical flexibility under a bending stress. In addition, a VDIP memory array with 16 × 16 memory cells on a large‐scale substrate is demonstrated, suggesting the strong potential of the VDIP for high‐density, large‐area storage devices.

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confidence: 73%

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Zou

2019

Physica Rapid Research Ltrs

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“…Up to now, the highest reported efficiency of a perovskite solar cell was recorded at 22.7% by the National Renewable Energy Laboratory (NREL) [ 12 ]. The material used was an inorganic-organic hybrid material with a perovskite (ABX 3 ) structure (A: methylammonium (CH 3 NH 3 + , MA), formamidinium (HC(NH 2 ) 2 + , FA), Cs, Rb; B = Pb, Sn; X = halogen anion (Cl, Br and I), (SCN − )) [ 13 , 14 , 15 , 16 , 17 ]. Despite rapid developments in the performance of perovskite solar cells, there have been concerns about several issues such as the photocurrent hysteresis, device stability, and scaling issues that are able to affect the measurement accuracy and/or practical applications of these devices.…”

Section: Introductionmentioning

confidence: 99%

The Impact of Hybrid Compositional Film/Structure on Organic–Inorganic Perovskite Solar Cells

Chen

et al. 2018

Nanomaterials

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Perovskite solar cells (PSCs) have been intensively investigated over the last several years. Unprecedented progress has been made in improving their power conversion efficiency; however, the stability of perovskite materials and devices remains a major obstacle for the future commercialization of PSCs. In this review, recent progress in PSCs is summarized in terms of the hybridization of compositions and device architectures for PSCs, with special attention paid to device stability. A brief history of the development of PSCs is given, and their chemical structures, optoelectronic properties, and the different types of device architectures are discussed. Then, perovskite composition engineering is reviewed in detail, with particular emphasis on the cationic components and their impact on film morphology, the optoelectronic properties, device performance, and stability. In addition, the impact of two-dimensional and/or one-dimensional and nanostructured perovskites on structural and device stability is surveyed. Finally, a future outlook is proposed for potential resolutions to overcome the current issues.

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“…For example, 2D OHPs can be obtained by substitution with a pseudohalide such as thiocyanate (SCN−) . Cheng et al demonstrated that 2D OHPs were able to show ternary RS using MA 2 PbI 2 (SCN) 2 . The 2D MA 2 PbI 2 (SCN) 2 was prepared by a spin‐coating method (Figure A).…”

Section: Memristors Based On Ohpsmentioning

confidence: 99%

“…C, Typical I ‐ V curve of the ITO/MA 2 PbI 2 (SCN) 2 /Al memristor. D, The endurance and E, retention characteristics of the memristor…”

Section: Memristors Based On Ohpsmentioning

confidence: 99%

Memristors with organic‐inorganic halide perovskites

Zhao

Lin

et al. 2019

InfoMat

149

115

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Organic‐inorganic halide perovskites (OHPs) have been intensively studied for application in solar cells with high conversion efficiency exceeding 22%. The unique electrical and optical properties of OHPs have led to their use in optoelectronic device applications beyond photovoltaics, such as light‐emitting diodes, photodetectors, transistors. New information storage technologies and computing architectures are being researched extensively with the aim of addressing the growing challenge of approaching end of Moore's law and von Neumann bottleneck. As the fourth basic circuit element, memristor is a leading candidate with powerful capabilities in information storage and neuromorphic computing applications. Recently, OHPs have received growing attention as promising materials for memristors. In particular, their mixed ionic‐electronic conduction ability paired with light sensitivity provide OHPs with the opportunity to display novel functions such as optical‐erase memory, optogenetics‐inspired synaptic functions, and light‐accelerated learning capability. This review covers recent advances in OHP‐based memristors development including memristive mechanism and analytical models, universal memristive characteristics for memory and neuromorphic computing applications, and novel multi‐functionalization. Challenges and future prospects of OHP‐based memristors are also discussed.

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Pseudohalide‐Induced 2D (CH₃NH₃)₂PbI₂(SCN)₂ Perovskite for Ternary Resistive Memory with High Performance

Cited by 98 publications

References 88 publications

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

The Impact of Hybrid Compositional Film/Structure on Organic–Inorganic Perovskite Solar Cells

Memristors with organic‐inorganic halide perovskites

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