Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications

Grandusky, James R.; Smart, J.; Mendrick, Mark C.; Schowalter, L. J.; Chen, K.X.; Schubert, E. Fred

doi:10.1016/j.jcrysgro.2009.01.101

Cited by 92 publications

(68 citation statements)

References 9 publications

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“…Fully pseudomorphic 500 nm thick AlGaN layers with Al content of 60% and 1 μm thick nearly pseudomorphic layers with Al content of 70% have been demonstrated. [83] The advantage of pseudomorphic growth has been confirmed by XRD rocking curve measurements. For a 600 nm thick pseudomorphic Al0.72Ga0.28N layer, the FWHM values of the (0002) and (101 2) reflections were 81 and 104 arcsec, respectively, compared to 64 and 89 arcsec in AlN.…”

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 85%

“…For a 600 nm thick pseudomorphic Al0.72Ga0.28N layer, the FWHM values of the (0002) and (101 2) reflections were 81 and 104 arcsec, respectively, compared to 64 and 89 arcsec in AlN. [83] By contrast, FWHM values of the (0002) and (101 2) reflections increased from 49 and 30 arcsec, respectively, in AlN to 239 and 302 arcsec in a 500 nm thick relaxed Al0.50Ga0.50N sample.…”

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 89%

“…To avoid this, pseudomorphic growth of high Al-molar fraction AlGaN with compressive strain on AlN has been developed. [55,83,84] Because almost no new defects are generated in the pseudomorphic region, the crystalline quality of the AlGaN-based heterostructures becomes comparable to the starting substrate.…”

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 99%

“…Fortunately, researchers found that, by using a transitional layer, which consisted of a linearly graded alloy with composition changed from AlN to the desired Al-molar fraction, it is possible to grow pseudomorphic AlGaN with a thickness ranging from several hundreds of nanometers to more than a micrometer, depending on the Al-molar fraction. [83] Generally, sufficiently thick pseudomorphic AlGaN layers with Al content above 70% can be grown on AlN for use in DUV LEDs with wavelengths below 280 nm, while layers with lower Al content tend to relax due to lattice mismatch. Fully pseudomorphic 500 nm thick AlGaN layers with Al content of 60% and 1 μm thick nearly pseudomorphic layers with Al content of 70% have been demonstrated.…”

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 99%

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Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 85%

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 89%

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 99%

Section: Pseudomorphic Growth Of High Al-molar Fraction Algan On Alnmentioning

confidence: 99%

See 2 more Smart Citations

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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“…The best substrates for GaN-based devices are GaN and AlN. AlN ones are superior for the structures with high Al content, e.g., UV devices (AlN is transparent down to about 200 nm), FETs and both vertical and lateral Schottky and p-i-n diodes (Luo et al, 2002) (unintentionally doped (UID) AlN crystals are insulators 3 in contrast to GaN ones that have a high background 2 The critical thickness is the equilibrium entity, thus metastable metamorphic layers (Hull & Stach, 1996) of higher thickness could exist at low temperatures: e.g., recently an n-type AlGaN layer on the bulk AlN substrate with a thickness more than an order of magnitude greater than the critical value was reported (Grandusky et al, 2009). 3 The concentration of the residual oxygen is high for the sublimation grown AlN crystals (Herro et al, 2006); however, most of oxygen is incorporated not as a substitutional shallow donor, but as impurity-forming complexes with point and extended defects located deep in the gap (Freitas, 2005;Schultz, 2010;Slack et al, 2002).…”

mentioning

confidence: 99%

Development of 2" AlN Substrates Using SiC Seeds

Avdeev¹,

Chemekova²,

Мохов³

et al. 2012

Modern Aspects of Bulk Crystal and Thin Film Preparation

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III‐Nitride Light‐Emitting Diodes

Ding

Avrutin

Özgür

et al. 2017

Wiley Encyclopedia of Electrical and Electronics Engineering

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III‐Nitride light‐emitting diodes (LEDs) are luminescent p–n junction devices composed of stacked groupIII‐nitride semiconductor epitaxial layers with modulated groupIIIelement composition and dopant concentration. As new processing techniques onIII‐nitrides are constantly emerging, the luminescence efficiency ofIII‐nitrideLEDs in the visible range has already surpassed traditional fluorescent lamps in the last decade. Their applications expand from signs, displays, and traffic lights to general solid‐state lighting. Fabrication ofIII‐nitrideLEDs has become an essential part of modern semiconductor industry. In this article, we start by introducing the fundamentals and physics ofIII‐nitrideLEDs, and then we review the key challenges and solution strategies for the realization of high‐brightnessIII‐nitrideLEDs in visible and ultraviolet (UV) spectral ranges, with a focus on the epitaxial growth of film materials by using the metalorganic chemical vapor deposition (MOCVD). The research trends in the latest years and a perspective on the future ofIII‐nitrideLEDs, especially on more efficient green andUVLEDs including those with boron nitride (BN), are also discussed.

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Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications

Cited by 92 publications

References 9 publications

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Development of 2" AlN Substrates Using SiC Seeds

III‐Nitride Light‐Emitting Diodes

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