Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applications

Wu, C.S.; Pao, C.K.; Yau, W.; Kanber, H.; Hu, Ming; Bar, S.X.; Kurdoghlian, A.; Bardai, Z.; Bosch, D.; Seashore, C. R.; Gawronski, M. J.

doi:10.1109/22.348082

Cited by 42 publications

(8 citation statements)

References 10 publications

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“…Design and optimization of the PHEMT structure has been reported previously. 2,5,6 In this article, we discuss factors that have significant impact on the manufacturability of active PHEMT device as gauged by the rf performance of an X-band high power amplifier ͑HPA͒. Data, collected over a 12-month period, supporting our assertions will be presented.…”

Section: Introductionmentioning

confidence: 87%

“…A depleted cap degrades the unity gain cutoff frequency ( f t ) and too thick a cap degrades the breakdown properties of the device. 5 We believe that most of the variation seen in the ungated device current is owing to variation in the thickness, doping, and mobility of the cap layer. Using a predetermined current as endpoint for the channel etch will yield: ͑a͒ a deeper recess if the current of the ungated device is high and ͑b͒ a shallower recess if the current of the ungated device is low.…”

Section: B Materials Variability and Its Effect On Etchingmentioning

confidence: 99%

“…A deep channel recess that completely removes the cap layer would result in deep surface depletion and has been shown to degrade the rf performance of the device. 5 The effect of surface states on the breakdown voltage and transient drain current has been considered by several authors. 7,8 According to Barton and Ladbrooke,8 surface states capture charges and increase the breakdown voltage.…”

Section: B Rf Performancementioning

confidence: 99%

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Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

Hussain

Chu

Wen

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report the effect of start epi-material variability on the performance of double-recessed power pseudomorphic high electron mobility transistors. Variation in channel-recess depth, which is related to variation in the start material, is critically linked to rf performance of monolithic microwave and millimeter wave integrated circuit high power amplifiers. For high yield, it is important to control the channel recess, which in turn has implications on acceptable variation in epi-material. Design tweaks can relax channel-recess tolerance limits, but it is still important to account for material variation.

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Section: Introductionmentioning

confidence: 87%

Section: B Materials Variability and Its Effect On Etchingmentioning

confidence: 99%

Section: B Rf Performancementioning

confidence: 99%

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Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

Hussain

Chu

Wen

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Communication providers are now focusing on the Ka-band for next-generation terrestrial systems, such as satellite communication systems, wireless local-area networks, local multipoint distribution system, personal communications network links, and digital radio. As a result, research activities in Ka-band devices and power amplifiers have increased significantly [1][2][3][4][5]. Ka-band terrestrial systems require power amplifiers with compact size and high reliability.…”

Section: Introductionmentioning

confidence: 99%

A three‐stage Ka band PHEMT wideband amplifier MMIC

Huang

Chang

et al. 2004

Micro & Optical Tech Letters

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In this paper, a Ka‐Band 24‐dBm AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier is demonstrated. This three‐stage amplifier is designed to fully match for 50Ω input and output impedances. With 4 V and 250‐mA DC bias, we achieve 15‐dB small‐signal gain, 24 dBm P−1dB, 24.3% PAE, and better than 10‐dB input return loss from 31 to 37 GHz. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 277–280, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20277

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“…As lower frequency bands become saturated, communication providers are now focusing on the Ka band for next-generation terrestrial systems, such as satellite communication systems, wireless local area networks (LANs), local multipoint distribution system (LMDS), personal communications network links, and digital radio. As a result, research activities in Ka-Band HPAs have also increased significantly in recent years [1][2][3][4][5]. Ka-band terrestrial systems require HPAs with compact size and high reliability.…”

Section: Introductionmentioning

confidence: 99%

Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

Huang

Chang

et al. 2005

Micro & Optical Tech Letters

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ABSTRACT:A fully matched Ka-band INTRODUCTIONLow cost, light weight, high yield, and good reliability are key issues for the successful development of missile seekers, electronic warfare, smart munitions, and commercial point-to-point communication applications. With the maturing of pseudomorphic highelectron-mobility transistor (PHEMT) technology, monolithic millimeter-wave integrated circuit (MMIC) high-power amplifiers (HPAs) can offer all the above benefits. These PHEMT MMIC HPAs have also generated considerable interest in the electronicpower community in recent years. On the other hand, the demand for broadband-data distribution has increased significantly. As lower frequency bands become saturated, communication providers are now focusing on the Ka band for next-generation terrestrial systems, such as satellite communication systems, wireless local area networks (LANs), local multipoint distribution system (LMDS), personal communications network links, and digital radio. As a result, research activities in Ka-Band HPAs have also increased significantly in recent years [1][2][3][4][5]. Ka-band terrestrial systems require HPAs with compact size and high reliability. These HPAs also need to be mass producible in order to reduce the cost. Although traveling-wave tube amplifiers (TWTAs) can be used in Ka-band terrestrial systems, solid-state power amplifiers (SSPAs) are less expensive, smaller in size, lighter in weight, and more reliable. Indeed, the performances of GaAs-based PHEMT microwave monolithic integrated HPAs have been drastically improved in the past decade. In fact, GaAs-based PHEMTs have already been extensively used as SSPAs in Ka-band terrestrial systems. As the performances of GaAs-based PHEMTs are further improved, these devices will continue to offer significant performance enhancements for applications in satellite and ground-based communication systems. To reduce the production cost of Ka-band HPAs, we can use lumped-element matching circuits to miniaturize the size of GaAs-based MMIC chips. On the other hand, we can use multistage configurations to achieve large output power. However, the circuit complexity increases significantly as the number of amplifier stages increases. It should be noted, however, that conventional GaAs-based PHEMTs have been fabricated on 4-mil-thick GaAs substrates [6 -8]. Recent development of the 2-mil-thick GaAs PHEMT fabrication technology has made it possible to pack more power within the same device periphery and to provide a lower production cost without sacrificing the device performance. This article describes the design, fabrication, and testing of Ka-band HPAs using lumped-element matching circuits and 2-mil-thick GaAs PHEMT fabrication technology. The proposed two-stage AlGaAs/InGaAs/GaAs PHEMT MMIC [9,10] HPA delivers a 1-W output and a linear power gain larger than 10 dB in the frequency range between 30 and 37 GHz. This amplifier is designed to fully match 50⍀ input and output impedances without any external circuit. Figure 1 shows the designed tw...

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Pseudomorphic HEMT manufacturing technology for multifunctional Ka-band MMIC applications

Cited by 42 publications

References 10 publications

Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

A three‐stage Ka band PHEMT wideband amplifier MMIC

Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates

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