Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature

Abstract

Pseudomorphic In0.53 Ga0.47 As/AlAs/InAs resonant tunneling diodes have been grown on InP substrates by molecular beam epitaxy. Peak-to-valley current ratios as high as 30 at 300 K and 63 at 77 K are obtained on a structure with barriers of ten atomic layers AlAs, and a well consisting of three atomic layers of In0.53 Ga0.47 As, six atomic layers of InAs, and three atomic layers of In0.53 Ga0.47 As. For comparison pseudomorphic In0.53 Ga0.47 As/AlAs with In0.53 Ga0.47 As well structures have also been fabricated. For the In0.53 Ga0.47 As well structures, peak-to-valley current ratios as high as 23 have been obtained at 300 K, and, in other devices with lower current densities, two resonances are observed at room temperature.

Resonant tunneling diodes: models and properties

“…In this regard, a variation of the InGaAs/AlAs system has come to the fore. It contains a modified InGaAs well with extra In inserted, either in the form of a higher alloy concentration than called for by lattice matching or a small number of pure InAs central layers [72]. Either way, the extra In lowers the resonance energy in the well so that the peak voltage is lowered correspondingly.…”

Photoluminescence Characterisation of High Current Density Resonant Tunnelling Diodes for Terahertz Applications

“…Low alloy broadening is required for good device performance to minimise alloy scattering. In 1988, Broekaert et al reported a high PVCR of 30 at 300 K for a InGaAs/AlAs/InAs structure with AlAs barriers of ten atomic layers for a peak current density of 6 kA/cm 2 [44]. This was achieved by the incorporation of binary InAs in the QW to reduce alloy scattering.…”

High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition

“…The initial measurements done by Broekaert et al, 10 show that, in an In 0.53 Ga 0.47 As/AlAs/InAs structure grown on InP substrate, the PCD for the resonant tunneling through the second energy level is almost ten times greater than the PCD associated with the first energy level for the same structure. However, the peak voltage for the second resonant energy level is so high (ϳ4.1 V) that it makes the use of tunneling through the second level highly impractical for any application.…”